All Transistors. BD900 Datasheet

 

BD900 Datasheet and Replacement


   Type Designator: BD900
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 70 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO220
 

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BD900 Datasheet (PDF)

 ..1. Size:121K  inchange semiconductor
 bd896 bd898 bd900 bd902.pdf pdf_icon

BD900

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD896/898/900/902 DESCRIPTION With TO-220C package Complement to type BD895/897/899/901 DARLINGTON APPLICATIONS For use in output stages in audio equipment, general amplifier,and analogue switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3

 ..2. Size:212K  inchange semiconductor
 bd900.pdf pdf_icon

BD900

isc Silicon PNP Darlington Power Transistor BD900DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = -3AFE CCollector Power Dissipation-: P = 70W@ T = 25C C8 A Continuous Collector CurrentComplement to Type BD899Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAP

 0.1. Size:120K  inchange semiconductor
 bd896a bd898a bd900a.pdf pdf_icon

BD900

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD896A/898A/900A DESCRIPTION With TO-220C package Complement to type BD895A/897A/901A DARLINGTON APPLICATIONS For use in output stages in audio equipment, general amplifier,and analogue switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Em

 0.2. Size:212K  inchange semiconductor
 bd900a.pdf pdf_icon

BD900

isc Silicon PNP Darlington Power Transistor BD900ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = -4AFE CCollector Power Dissipation-: P = 70W@ T = 25C C8 A Continuous Collector CurrentComplement to Type BD899AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation

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Datasheet: BD896 , BD896A , BD897 , BD897A , BD898 , BD898A , BD899 , BD899A , S8550 , BD900A , BD901 , BD902 , BD905 , BD906 , BD907 , BD908 , BD909 .

Keywords - BD900 transistor datasheet

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