BD935 Todos los transistores

 

BD935 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BD935
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO220
 

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BD935 Datasheet (PDF)

 ..1. Size:331K  philips
 bd933 bd935 bd937 bd939 bd941.pdf pdf_icon

BD935

 ..2. Size:211K  inchange semiconductor
 bd933 bd935 bd937 bd939 bd941.pdf pdf_icon

BD935

isc Silicon NPN Power Transistor BD933/935/937/939/941DESCRIPTIONDC Current Gain-: h = 40(Min)@ I = 150mAFE CComplement to Type BD934/936/938/940/942Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in output stages of audio and televisionamplifier circuits where high peak powers can occur.ABSOLUTE MAXIMUM

 0.1. Size:213K  inchange semiconductor
 bd933f bd935f bd937f bd939f bd941f.pdf pdf_icon

BD935

isc Silicon NPN Power Transistor BD933F/935F/937F/939F/941FDESCRIPTIONDC Current Gain-: h = 40(Min)@ I = 150mAFE CComplement to Type BD934F/936F/938F/940F/942FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in output stages of audio and televisionamplifier circuits where high peak powers can occur.ABSOLU

Otros transistores... BD909 , BD910 , BD911 , BD912 , BD933 , BD933F , BD934 , BD934F , 13005 , BD935F , BD936 , BD936F , BD937 , BD937F , BD938 , BD938F , BD939 .

History: RN2709JE | 3DD4242D-R | SD802 | C9012B | MA0461 | 2SB1136S | 2SB1135S

 

 
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