BD935 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BD935 Specs and Replacement

Type Designator: BD935

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO220

BD935 Substitution

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BD935 datasheet

..1. Size:331K philips

bd933 bd935 bd937 bd939 bd941.pdf pdf_icon

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..2. Size:211K inchange semiconductor

bd933 bd935 bd937 bd939 bd941.pdf pdf_icon

isc Silicon NPN Power Transistor BD933/935/937/939/941 DESCRIPTION DC Current Gain- h = 40(Min)@ I = 150mA FE C Complement to Type BD934/936/938/940/942 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM... See More ⇒

0.1. Size:213K inchange semiconductor

bd933f bd935f bd937f bd939f bd941f.pdf pdf_icon

isc Silicon NPN Power Transistor BD933F/935F/937F/939F/941F DESCRIPTION DC Current Gain- h = 40(Min)@ I = 150mA FE C Complement to Type BD934F/936F/938F/940F/942F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLU... See More ⇒

Detailed specifications: BD909, BD910, BD911, BD912, BD933, BD933F, BD934, BD934F, C3198, BD935F, BD936, BD936F, BD937, BD937F, BD938, BD938F, BD939