BD941F Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD941F
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 140 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 3 MHz
Ganancia de corriente contínua (hFE): 40
Encapsulados: TO220F
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BD941F datasheet
bd933f bd935f bd937f bd939f bd941f.pdf
isc Silicon NPN Power Transistor BD933F/935F/937F/939F/941F DESCRIPTION DC Current Gain- h = 40(Min)@ I = 150mA FE C Complement to Type BD934F/936F/938F/940F/942F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLU
bd941f.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD941F DESCRIPTION With TO-220F package Low collector saturation voltage APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBO
bd941.pdf
isc Silicon NPN Power Transistor BD941 DESCRIPTION DC Current Gain- h = 40(Min)@ I = 150mA FE C Complement to Type BD942 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P
Otros transistores... BD937F , BD938 , BD938F , BD939 , BD939F , BD940 , BD940F , BD941 , D965 , BD942 , BD942F , BD943 , BD943F , BD944 , BD944F , BD945 , BD945F .
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