BD941F Specs and Replacement
Type Designator: BD941F
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO220F
BD941F Substitution
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BD941F datasheet
bd933f bd935f bd937f bd939f bd941f.pdf 
isc Silicon NPN Power Transistor BD933F/935F/937F/939F/941F DESCRIPTION DC Current Gain- h = 40(Min)@ I = 150mA FE C Complement to Type BD934F/936F/938F/940F/942F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLU... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD941F DESCRIPTION With TO-220F package Low collector saturation voltage APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBO... See More ⇒
isc Silicon NPN Power Transistor BD941 DESCRIPTION DC Current Gain- h = 40(Min)@ I = 150mA FE C Complement to Type BD942 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒
Detailed specifications: BD937F, BD938, BD938F, BD939, BD939F, BD940, BD940F, BD941, D965, BD942, BD942F, BD943, BD943F, BD944, BD944F, BD945, BD945F
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