All Transistors. BD941F Datasheet

 

BD941F Datasheet, Equivalent, Cross Reference Search


   Type Designator: BD941F
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 140 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO220F

 BD941F Transistor Equivalent Substitute - Cross-Reference Search

   

BD941F Datasheet (PDF)

 ..1. Size:213K  inchange semiconductor
bd933f bd935f bd937f bd939f bd941f.pdf

BD941F
BD941F

isc Silicon NPN Power Transistor BD933F/935F/937F/939F/941FDESCRIPTIONDC Current Gain-: h = 40(Min)@ I = 150mAFE CComplement to Type BD934F/936F/938F/940F/942FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in output stages of audio and televisionamplifier circuits where high peak powers can occur.ABSOLU

 ..2. Size:81K  inchange semiconductor
bd941f.pdf

BD941F
BD941F

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD941F DESCRIPTION With TO-220F package Low collector saturation voltage APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings(Ta=25) SYMBO

 9.1. Size:331K  philips
bd933 bd935 bd937 bd939 bd941.pdf

BD941F
BD941F

 9.2. Size:210K  inchange semiconductor
bd941.pdf

BD941F
BD941F

isc Silicon NPN Power Transistor BD941DESCRIPTION DC Current Gain-: h = 40(Min)@ I = 150mAFE CComplement to Type BD942Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in output stages of audio and televisionamplifier circuits where high peak powers can occur.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

 9.3. Size:211K  inchange semiconductor
bd933 bd935 bd937 bd939 bd941.pdf

BD941F
BD941F

isc Silicon NPN Power Transistor BD933/935/937/939/941DESCRIPTIONDC Current Gain-: h = 40(Min)@ I = 150mAFE CComplement to Type BD934/936/938/940/942Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in output stages of audio and televisionamplifier circuits where high peak powers can occur.ABSOLUTE MAXIMUM

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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