Справочник транзисторов. BD941F

 

Биполярный транзистор BD941F - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BD941F
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 30 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 140 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 120 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 3 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 3 MHz
   Статический коэффициент передачи тока (hfe): 40
   Корпус транзистора: TO220F

 Аналоги (замена) для BD941F

 

 

BD941F Datasheet (PDF)

 ..1. Size:213K  inchange semiconductor
bd933f bd935f bd937f bd939f bd941f.pdf

BD941F
BD941F

isc Silicon NPN Power Transistor BD933F/935F/937F/939F/941FDESCRIPTIONDC Current Gain-: h = 40(Min)@ I = 150mAFE CComplement to Type BD934F/936F/938F/940F/942FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in output stages of audio and televisionamplifier circuits where high peak powers can occur.ABSOLU

 ..2. Size:81K  inchange semiconductor
bd941f.pdf

BD941F
BD941F

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD941F DESCRIPTION With TO-220F package Low collector saturation voltage APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings(Ta=25) SYMBO

 9.1. Size:331K  philips
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BD941F
BD941F

 9.2. Size:210K  inchange semiconductor
bd941.pdf

BD941F
BD941F

isc Silicon NPN Power Transistor BD941DESCRIPTION DC Current Gain-: h = 40(Min)@ I = 150mAFE CComplement to Type BD942Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in output stages of audio and televisionamplifier circuits where high peak powers can occur.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

 9.3. Size:211K  inchange semiconductor
bd933 bd935 bd937 bd939 bd941.pdf

BD941F
BD941F

isc Silicon NPN Power Transistor BD933/935/937/939/941DESCRIPTIONDC Current Gain-: h = 40(Min)@ I = 150mAFE CComplement to Type BD934/936/938/940/942Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in output stages of audio and televisionamplifier circuits where high peak powers can occur.ABSOLUTE MAXIMUM

Другие транзисторы... BD937F , BD938 , BD938F , BD939 , BD939F , BD940 , BD940F , BD941 , NJW0281G , BD942 , BD942F , BD943 , BD943F , BD944 , BD944F , BD945 , BD945F .

 

 
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