BD952F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD952F
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de transistor bipolar BD952F
BD952F Datasheet (PDF)
bd950f bd952f bd954f bd956f.pdf
isc Silicon PNP Power Transistor BD950F/952F/954F/956FDESCRIPTIONDC Current Gain-: h = 40(Min)@ I = -500mAFE CComplement to Type BD949F/951F/953F/955FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITBD9
bd949 bd950 bd951 bd952 bd953 bd954 bd955 bd956.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package BD949, BD951, BD953, BD955BD950, BD952, BD954, BD956BD949, 951, 953, 955 NPN PLASTIC POWER TRANSISTORSBD950, 952, 954, 956 PNP PLASTIC POWER TRANSISTORSPower Amplifier and Switching ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR12
bd952.pdf
isc Silicon PNP Power Transistor BD952DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEODC Current Gain-: h = 40(Min)@ I = -500mAFE CComplement to Type BD951Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
