BD952F Specs and Replacement
Type Designator: BD952F
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO220F
BD952F Substitution
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BD952F datasheet
bd950f bd952f bd954f bd956f.pdf 
isc Silicon PNP Power Transistor BD950F/952F/954F/956F DESCRIPTION DC Current Gain- h = 40(Min)@ I = -500mA FE C Complement to Type BD949F/951F/953F/955F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT BD9... See More ⇒
bd949 bd950 bd951 bd952 bd953 bd954 bd955 bd956.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD949, 951, 953, 955 NPN PLASTIC POWER TRANSISTORS BD950, 952, 954, 956 PNP PLASTIC POWER TRANSISTORS Power Amplifier and Switching Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 ... See More ⇒
isc Silicon PNP Power Transistor BD952 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO DC Current Gain- h = 40(Min)@ I = -500mA FE C Complement to Type BD951 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒
Detailed specifications: BD948F , BD949 , BD949F , BD950 , BD950F , BD951 , BD951F , BD952 , B647 , BD953 , BD953F , BD954 , BD954F , BD955 , BD955F , BD956 , BD956F .
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