BDT31AF Todos los transistores

 

BDT31AF . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BDT31AF
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 15 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO220F
 

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BDT31AF Datasheet (PDF)

 ..1. Size:231K  inchange semiconductor
 bdt31f bdt31af bdt31bf bdt31cf bdt31df.pdf pdf_icon

BDT31AF

isc Silicon NPN Power Transistors BDT31F/AF/BF/CF/DFDESCRIPTIONDC Current Gain -h = 25(Min)@ I = 1.0AFE CCollector-Emitter Sustaining Voltage-: V = 40V(Min)- BDT31F; 60V(Min)- BDT31AFCEO(SUS)80V(Min)- BDT31BF; 100V(Min)- BDT31CF120V(Min)- BDT31DFComplement to Type BDT32F/AF/BF/CF/DFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationA

 8.1. Size:229K  inchange semiconductor
 bdt31 bdt31a bdt31b bdt31c.pdf pdf_icon

BDT31AF

isc Silicon NPN Power Transistors BDT31/A/B/CDESCRIPTIONDC Current Gain -h = 25(Min)@ I = 1.0AFE CCollector-Emitter Sustaining Voltage-: V = 40V(Min)- BDT31; 60V(Min)- BDT31ACEO(SUS)80V(Min)- BDT31B; 100V(Min)- BDT31CComplement to Type BDT32/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in aud

 9.1. Size:112K  inchange semiconductor
 bdt31f af bf cf df.pdf pdf_icon

BDT31AF

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT31F/AF/BF/CF/DF DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= 1.0A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT31F; 60V(Min)- BDT31AF 80V(Min)- BDT31BF; 100V(Min)- BDT31CF 120V(Min)- BDT31DF Complement to Type BDT32F/AF/BF/CF/DF APPLICATIONS Designed for use

 9.2. Size:111K  inchange semiconductor
 bdt31-a-b-c bdt31 a b c.pdf pdf_icon

BDT31AF

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT31/A/B/C DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= 1.0A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT31; 60V(Min)- BDT31A 80V(Min)- BDT31B; 100V(Min)- BDT31C Complement to Type BDT32/A/B/C APPLICATIONS Designed for use in audio output stages and general ampl

MOSTRAR MÁS

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: ESM2668 | BC848CW | 3DG536M | 2N389-1 | BCW16K | 2T928B | NKT272

 

 
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