BDT31AF pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BDT31AF Specs and Replacement

Type Designator: BDT31AF

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 15 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO220F

BDT31AF Substitution

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BDT31AF datasheet

..1. Size:231K inchange semiconductor

bdt31f bdt31af bdt31bf bdt31cf bdt31df.pdf pdf_icon

isc Silicon NPN Power Transistors BDT31F/AF/BF/CF/DF DESCRIPTION DC Current Gain -h = 25(Min)@ I = 1.0A FE C Collector-Emitter Sustaining Voltage- V = 40V(Min)- BDT31F; 60V(Min)- BDT31AF CEO(SUS) 80V(Min)- BDT31BF; 100V(Min)- BDT31CF 120V(Min)- BDT31DF Complement to Type BDT32F/AF/BF/CF/DF Minimum Lot-to-Lot variations for robust device performance and reliable operation A... See More ⇒

8.1. Size:229K inchange semiconductor

bdt31 bdt31a bdt31b bdt31c.pdf pdf_icon

isc Silicon NPN Power Transistors BDT31/A/B/C DESCRIPTION DC Current Gain -h = 25(Min)@ I = 1.0A FE C Collector-Emitter Sustaining Voltage- V = 40V(Min)- BDT31; 60V(Min)- BDT31A CEO(SUS) 80V(Min)- BDT31B; 100V(Min)- BDT31C Complement to Type BDT32/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in aud... See More ⇒

9.1. Size:112K inchange semiconductor

bdt31f af bf cf df.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT31F/AF/BF/CF/DF DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= 1.0A Collector-Emitter Sustaining Voltage- VCEO(SUS) = 40V(Min)- BDT31F; 60V(Min)- BDT31AF 80V(Min)- BDT31BF; 100V(Min)- BDT31CF 120V(Min)- BDT31DF Complement to Type BDT32F/AF/BF/CF/DF APPLICATIONS Designed for use ... See More ⇒

9.2. Size:111K inchange semiconductor

bdt31-a-b-c bdt31 a b c.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT31/A/B/C DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= 1.0A Collector-Emitter Sustaining Voltage- VCEO(SUS) = 40V(Min)- BDT31; 60V(Min)- BDT31A 80V(Min)- BDT31B; 100V(Min)- BDT31C Complement to Type BDT32/A/B/C APPLICATIONS Designed for use in audio output stages and general ampl... See More ⇒

Detailed specifications: BDT30B, BDT30BF, BDT30C, BDT30CF, BDT30DF, BDT30F, BDT31, BDT31A, C5198, BDT31B, BDT31BF, BDT31C, BDT31CF, BDT31DF, BDT31F, BDT32, BDT32A