BDT31AF - описание и поиск аналогов

 

BDT31AF. Аналоги и основные параметры

Наименование производителя: BDT31AF

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 15 W

Макcимально допустимое напряжение коллектор-база (Ucb): 100 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V

Макcимальный постоянный ток коллектора (Ic): 3 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 3 MHz

Статический коэффициент передачи тока (hFE): 10

Корпус транзистора: TO220F

 Аналоги (замена) для BDT31AF

- подборⓘ биполярного транзистора по параметрам

 

BDT31AF даташит

 ..1. Size:231K  inchange semiconductor
 bdt31f bdt31af bdt31bf bdt31cf bdt31df.pdf pdf_icon

BDT31AF

isc Silicon NPN Power Transistors BDT31F/AF/BF/CF/DF DESCRIPTION DC Current Gain -h = 25(Min)@ I = 1.0A FE C Collector-Emitter Sustaining Voltage- V = 40V(Min)- BDT31F; 60V(Min)- BDT31AF CEO(SUS) 80V(Min)- BDT31BF; 100V(Min)- BDT31CF 120V(Min)- BDT31DF Complement to Type BDT32F/AF/BF/CF/DF Minimum Lot-to-Lot variations for robust device performance and reliable operation A

 8.1. Size:229K  inchange semiconductor
 bdt31 bdt31a bdt31b bdt31c.pdf pdf_icon

BDT31AF

isc Silicon NPN Power Transistors BDT31/A/B/C DESCRIPTION DC Current Gain -h = 25(Min)@ I = 1.0A FE C Collector-Emitter Sustaining Voltage- V = 40V(Min)- BDT31; 60V(Min)- BDT31A CEO(SUS) 80V(Min)- BDT31B; 100V(Min)- BDT31C Complement to Type BDT32/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in aud

 9.1. Size:112K  inchange semiconductor
 bdt31f af bf cf df.pdf pdf_icon

BDT31AF

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT31F/AF/BF/CF/DF DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= 1.0A Collector-Emitter Sustaining Voltage- VCEO(SUS) = 40V(Min)- BDT31F; 60V(Min)- BDT31AF 80V(Min)- BDT31BF; 100V(Min)- BDT31CF 120V(Min)- BDT31DF Complement to Type BDT32F/AF/BF/CF/DF APPLICATIONS Designed for use

 9.2. Size:111K  inchange semiconductor
 bdt31-a-b-c bdt31 a b c.pdf pdf_icon

BDT31AF

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT31/A/B/C DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= 1.0A Collector-Emitter Sustaining Voltage- VCEO(SUS) = 40V(Min)- BDT31; 60V(Min)- BDT31A 80V(Min)- BDT31B; 100V(Min)- BDT31C Complement to Type BDT32/A/B/C APPLICATIONS Designed for use in audio output stages and general ampl

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: BDT30B, BDT30BF, BDT30C, BDT30CF, BDT30DF, BDT30F, BDT31, BDT31A, C5198, BDT31B, BDT31BF, BDT31C, BDT31CF, BDT31DF, BDT31F, BDT32, BDT32A

 

 

 

 

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