BDT32F Todos los transistores

 

BDT32F Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BDT32F

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 15 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO220F

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BDT32F datasheet

 ..1. Size:166K  inchange semiconductor
bdt32f af bf cf df.pdf pdf_icon

BDT32F

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT32F/AF/BF/CF/DF DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= -1.0A Collector-Emitter Sustaining Voltage- VCEO(SUS) = -40V(Min)- BDT32F; -60V(Min)- BDT32AF -80V(Min)- BDT32BF; -100V(Min)- BDT32CF -120V(Min)- BDT32DF Complement to Type BDT31F/AF/BF/CF/DF APPLICATIONS Designed fo

 ..2. Size:217K  inchange semiconductor
bdt32f bdt32af bdt32bf bdt32cf bdt32df.pdf pdf_icon

BDT32F

isc Silicon PNP Power Transistors BDT32F/AF/BF/CF/DF DESCRIPTION DC Current Gain -h = 25(Min)@ I = -1.0A FE C Collector-Emitter Sustaining Voltage- V = -40V(Min)- BDT32F; -60V(Min)- BDT32AF CEO(SUS) -80V(Min)- BDT32BF; -100V(Min)- BDT32CF -120V(Min)- BDT32DF Complement to Type BDT31F/AF/BF/CF/DF Minimum Lot-to-Lot variations for robust device performance and reliable operat

 9.1. Size:232K  inchange semiconductor
bdt32 bdt32a bdt32b bdt32c.pdf pdf_icon

BDT32F

isc Silicon PNP Power Transistors BDT32/A/B/C DESCRIPTION DC Current Gain -h = 25(Min)@ I = -1.0A FE C Collector-Emitter Sustaining Voltage- V = -40V(Min)- BDT32; -60V(Min)- BDT32A CEO(SUS) -80V(Min)- BDT32B; -100V(Min)- BDT32C Complement to Type BDT31/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use i

 9.2. Size:157K  inchange semiconductor
bdt32 a b c.pdf pdf_icon

BDT32F

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT32/A/B/C DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= -1.0A Collector-Emitter Sustaining Voltage- VCEO(SUS) = -40V(Min)- BDT32; -60V(Min)- BDT32A -80V(Min)- BDT32B; -100V(Min)- BDT32C Complement to Type BDT31/A/B/C APPLICATIONS Designed for use in audio output stages and general

Otros transistores... BDT32 , BDT32A , BDT32AF , BDT32B , BDT32BF , BDT32C , BDT32CF , BDT32DF , TIP31C , BDT41 , BDT41A , BDT41AF , BDT41B , BDT41BF , BDT41C , BDT41CF , BDT41F .

History: 40519 | 40518 | BD150C

 

 

 


History: 40519 | 40518 | BD150C

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