BDT32F Todos los transistores

 

BDT32F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BDT32F
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 15 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO220F
 

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BDT32F Datasheet (PDF)

 ..1. Size:166K  inchange semiconductor
 bdt32f af bf cf df.pdf pdf_icon

BDT32F

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT32F/AF/BF/CF/DF DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= -1.0A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT32F; -60V(Min)- BDT32AF -80V(Min)- BDT32BF; -100V(Min)- BDT32CF -120V(Min)- BDT32DF Complement to Type BDT31F/AF/BF/CF/DF APPLICATIONS Designed fo

 ..2. Size:217K  inchange semiconductor
 bdt32f bdt32af bdt32bf bdt32cf bdt32df.pdf pdf_icon

BDT32F

isc Silicon PNP Power Transistors BDT32F/AF/BF/CF/DFDESCRIPTIONDC Current Gain -h = 25(Min)@ I = -1.0AFE CCollector-Emitter Sustaining Voltage-: V = -40V(Min)- BDT32F; -60V(Min)- BDT32AFCEO(SUS)-80V(Min)- BDT32BF; -100V(Min)- BDT32CF-120V(Min)- BDT32DFComplement to Type BDT31F/AF/BF/CF/DFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operat

 9.1. Size:232K  inchange semiconductor
 bdt32 bdt32a bdt32b bdt32c.pdf pdf_icon

BDT32F

isc Silicon PNP Power Transistors BDT32/A/B/CDESCRIPTIONDC Current Gain -h = 25(Min)@ I = -1.0AFE CCollector-Emitter Sustaining Voltage-: V = -40V(Min)- BDT32; -60V(Min)- BDT32ACEO(SUS)-80V(Min)- BDT32B; -100V(Min)- BDT32CComplement to Type BDT31/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use i

 9.2. Size:157K  inchange semiconductor
 bdt32 a b c.pdf pdf_icon

BDT32F

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT32/A/B/C DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= -1.0A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT32; -60V(Min)- BDT32A -80V(Min)- BDT32B; -100V(Min)- BDT32C Complement to Type BDT31/A/B/C APPLICATIONS Designed for use in audio output stages and general

MOSTRAR MÁS

Otros transistores... BDT32 , BDT32A , BDT32AF , BDT32B , BDT32BF , BDT32C , BDT32CF , BDT32DF , 100DA025D , BDT41 , BDT41A , BDT41AF , BDT41B , BDT41BF , BDT41C , BDT41CF , BDT41F .

History: OC309-1 | D44VH1

 

 
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