All Transistors. BDT32F Datasheet

 

BDT32F Datasheet and Replacement


   Type Designator: BDT32F
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 15 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO220F
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BDT32F Datasheet (PDF)

 ..1. Size:166K  inchange semiconductor
 bdt32f af bf cf df.pdf pdf_icon

BDT32F

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT32F/AF/BF/CF/DF DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= -1.0A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT32F; -60V(Min)- BDT32AF -80V(Min)- BDT32BF; -100V(Min)- BDT32CF -120V(Min)- BDT32DF Complement to Type BDT31F/AF/BF/CF/DF APPLICATIONS Designed fo

 ..2. Size:217K  inchange semiconductor
 bdt32f bdt32af bdt32bf bdt32cf bdt32df.pdf pdf_icon

BDT32F

isc Silicon PNP Power Transistors BDT32F/AF/BF/CF/DFDESCRIPTIONDC Current Gain -h = 25(Min)@ I = -1.0AFE CCollector-Emitter Sustaining Voltage-: V = -40V(Min)- BDT32F; -60V(Min)- BDT32AFCEO(SUS)-80V(Min)- BDT32BF; -100V(Min)- BDT32CF-120V(Min)- BDT32DFComplement to Type BDT31F/AF/BF/CF/DFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operat

 9.1. Size:232K  inchange semiconductor
 bdt32 bdt32a bdt32b bdt32c.pdf pdf_icon

BDT32F

isc Silicon PNP Power Transistors BDT32/A/B/CDESCRIPTIONDC Current Gain -h = 25(Min)@ I = -1.0AFE CCollector-Emitter Sustaining Voltage-: V = -40V(Min)- BDT32; -60V(Min)- BDT32ACEO(SUS)-80V(Min)- BDT32B; -100V(Min)- BDT32CComplement to Type BDT31/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use i

 9.2. Size:157K  inchange semiconductor
 bdt32 a b c.pdf pdf_icon

BDT32F

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT32/A/B/C DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= -1.0A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT32; -60V(Min)- BDT32A -80V(Min)- BDT32B; -100V(Min)- BDT32C Complement to Type BDT31/A/B/C APPLICATIONS Designed for use in audio output stages and general

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SC2719 | BLW44 | BD612 | 2SC2498 | BUJ105A | SRA2206S | BLX20

Keywords - BDT32F transistor datasheet

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