BDT32F - описание и поиск аналогов

 

BDT32F. Аналоги и основные параметры

Наименование производителя: BDT32F

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 15 W

Макcимально допустимое напряжение коллектор-база (Ucb): 80 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V

Макcимальный постоянный ток коллектора (Ic): 3 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 3 MHz

Статический коэффициент передачи тока (hFE): 10

Корпус транзистора: TO220F

 Аналоги (замена) для BDT32F

- подборⓘ биполярного транзистора по параметрам

 

BDT32F даташит

 ..1. Size:166K  inchange semiconductor
bdt32f af bf cf df.pdfpdf_icon

BDT32F

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT32F/AF/BF/CF/DF DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= -1.0A Collector-Emitter Sustaining Voltage- VCEO(SUS) = -40V(Min)- BDT32F; -60V(Min)- BDT32AF -80V(Min)- BDT32BF; -100V(Min)- BDT32CF -120V(Min)- BDT32DF Complement to Type BDT31F/AF/BF/CF/DF APPLICATIONS Designed fo

 ..2. Size:217K  inchange semiconductor
bdt32f bdt32af bdt32bf bdt32cf bdt32df.pdfpdf_icon

BDT32F

isc Silicon PNP Power Transistors BDT32F/AF/BF/CF/DF DESCRIPTION DC Current Gain -h = 25(Min)@ I = -1.0A FE C Collector-Emitter Sustaining Voltage- V = -40V(Min)- BDT32F; -60V(Min)- BDT32AF CEO(SUS) -80V(Min)- BDT32BF; -100V(Min)- BDT32CF -120V(Min)- BDT32DF Complement to Type BDT31F/AF/BF/CF/DF Minimum Lot-to-Lot variations for robust device performance and reliable operat

 9.1. Size:232K  inchange semiconductor
bdt32 bdt32a bdt32b bdt32c.pdfpdf_icon

BDT32F

isc Silicon PNP Power Transistors BDT32/A/B/C DESCRIPTION DC Current Gain -h = 25(Min)@ I = -1.0A FE C Collector-Emitter Sustaining Voltage- V = -40V(Min)- BDT32; -60V(Min)- BDT32A CEO(SUS) -80V(Min)- BDT32B; -100V(Min)- BDT32C Complement to Type BDT31/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use i

 9.2. Size:157K  inchange semiconductor
bdt32 a b c.pdfpdf_icon

BDT32F

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT32/A/B/C DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= -1.0A Collector-Emitter Sustaining Voltage- VCEO(SUS) = -40V(Min)- BDT32; -60V(Min)- BDT32A -80V(Min)- BDT32B; -100V(Min)- BDT32C Complement to Type BDT31/A/B/C APPLICATIONS Designed for use in audio output stages and general

Другие транзисторы: BDT32, BDT32A, BDT32AF, BDT32B, BDT32BF, BDT32C, BDT32CF, BDT32DF, TIP31C, BDT41, BDT41A, BDT41AF, BDT41B, BDT41BF, BDT41C, BDT41CF, BDT41F

 

 

 

 

↑ Back to Top
.