BDT60F Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDT60F
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 17 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 1.5 MHz
Ganancia de corriente contínua (hFE): 750
Encapsulados: TO220F
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BDT60F datasheet
bdt60f-af-bf-cf bdt60f af bf cf.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistors BDT60F/AF/BF/CF DESCRIPTION DC Current Gain -hFE = 750(Min)@ IC= -1.5A Collector-Emitter Sustaining Voltage- VCEO(SUS) = -60V(Min)- BDT60F; -80V(Min)- BDT60AF -100V(Min)- BDT60BF; -120V(Min)- BDT60CF Complement to Type BDT61F/61AF/61BF/61CF APPLICATIONS Designed for use in
bdt60f bdt60af bdt60bf bdt60cf.pdf
isc Silicon PNP Darlington Power Transistors BDT60F/AF/BF/CF DESCRIPTION DC Current Gain -h = 750(Min)@ I = -1.5A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min)- BDT60F; -80V(Min)- BDT60AF CEO(SUS) -100V(Min)- BDT60BF; -120V(Min)- BDT60CF Complement to Type BDT61F/61AF/61BF/61CF Minimum Lot-to-Lot variations for robust device performance and reliable operation APP
bdt60 bdt60a bdt60b bdt60c.pdf
isc Silicon PNP Darlington Power Transistors BDT60/A/B/C DESCRIPTION DC Current Gain -h = 750(Min)@ I = -1.5A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min)- BDT60; -80V(Min)- BDT60A; CEO(SUS) -100V(Min)- BDT60B; -120V(Min)- BDT60C Complement to Type BDT61/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desi
Otros transistores... BDT58 , BDT60 , BDT60A , BDT60AF , BDT60B , BDT60BF , BDT60C , BDT60CF , 2SC945 , BDT60L , BDT61 , BDT61A , BDT61AF , BDT61B , BDT61BF , BDT61C , BDT61CF .
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