BDT60F Datasheet, Equivalent, Cross Reference Search

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistors BDT60F/AF/BF/CF DESCRIPTION DC Current Gain -hFE = 750(Min)@ IC= -1.5A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60F; -80V(Min)- BDT60AF -100V(Min)- BDT60BF; -120V(Min)- BDT60CF Complement to Type BDT61F/61AF/61BF/61CF APPLICATIONS Designed for use in

isc Silicon PNP Darlington Power Transistors BDT60F/AF/BF/CFDESCRIPTIONDC Current Gain -h = 750(Min)@ I = -1.5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)- BDT60F; -80V(Min)- BDT60AFCEO(SUS)-100V(Min)- BDT60BF; -120V(Min)- BDT60CFComplement to Type BDT61F/61AF/61BF/61CFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPP

isc Silicon PNP Darlington Power Transistors BDT60/A/B/CDESCRIPTIONDC Current Gain -h = 750(Min)@ I = -1.5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)- BDT60; -80V(Min)- BDT60A;CEO(SUS)-100V(Min)- BDT60B; -120V(Min)- BDT60CComplement to Type BDT61/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesi