BDT62F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDT62F
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 17 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10 MHz
Ganancia de corriente contínua (hfe): 2000
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de transistor bipolar BDT62F
BDT62F Datasheet (PDF)
bdt62f.pdf
INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistors BDT62FDESCRIPTIONDC Current Gain -h = 1000(Min)@ I = -3AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Complement to Type BDT63FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio amplifier output stages , genera
bdt62 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistors BDT62/A/B/C DESCRIPTION DC Current Gain -hFE = 1000(Min)@ IC= -3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT62; -80V(Min)- BDT62A; -100V(Min)- BDT62B; -120V(Min)- BDT62C Complement to Type BDT63/A/B/C APPLICATIONS Designed for use in audio amplifier ou
bdt62 bdt62a bdt62b bdt62c.pdf
isc Silicon PNP Darlington Power Transistors BDT62/A/B/CDESCRIPTIONDC Current Gain -h = 1000(Min)@ I = -3AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)- BDT62; -80V(Min)- BDT62A;CEO(SUS)-100V(Min)- BDT62B; -120V(Min)- BDT62CComplement to Type BDT63/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesig
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: KT877A
History: KT877A
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D