All Transistors. BDT62F Datasheet

 

BDT62F Datasheet and Replacement


   Type Designator: BDT62F
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 17 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TO220F
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BDT62F Datasheet (PDF)

 ..1. Size:218K  inchange semiconductor
 bdt62f.pdf pdf_icon

BDT62F

INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistors BDT62FDESCRIPTIONDC Current Gain -h = 1000(Min)@ I = -3AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Complement to Type BDT63FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio amplifier output stages , genera

 9.1. Size:258K  no
 bdt62.pdf pdf_icon

BDT62F

 9.2. Size:306K  inchange semiconductor
 bdt62 a b c.pdf pdf_icon

BDT62F

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistors BDT62/A/B/C DESCRIPTION DC Current Gain -hFE = 1000(Min)@ IC= -3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT62; -80V(Min)- BDT62A; -100V(Min)- BDT62B; -120V(Min)- BDT62C Complement to Type BDT63/A/B/C APPLICATIONS Designed for use in audio amplifier ou

 9.3. Size:216K  inchange semiconductor
 bdt62 bdt62a bdt62b bdt62c.pdf pdf_icon

BDT62F

isc Silicon PNP Darlington Power Transistors BDT62/A/B/CDESCRIPTIONDC Current Gain -h = 1000(Min)@ I = -3AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)- BDT62; -80V(Min)- BDT62A;CEO(SUS)-100V(Min)- BDT62B; -120V(Min)- BDT62CComplement to Type BDT63/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesig

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Keywords - BDT62F transistor datasheet

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