BDT62F - аналоги, параметры транзистора - Справочник транзисторов

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INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistors BDT62F DESCRIPTION DC Current Gain -h = 1000(Min)@ I = -3A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Complement to Type BDT63F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio amplifier output stages , genera

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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistors BDT62/A/B/C DESCRIPTION DC Current Gain -hFE = 1000(Min)@ IC= -3A Collector-Emitter Sustaining Voltage- VCEO(SUS) = -60V(Min)- BDT62; -80V(Min)- BDT62A; -100V(Min)- BDT62B; -120V(Min)- BDT62C Complement to Type BDT63/A/B/C APPLICATIONS Designed for use in audio amplifier ou

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isc Silicon PNP Darlington Power Transistors BDT62/A/B/C DESCRIPTION DC Current Gain -h = 1000(Min)@ I = -3A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min)- BDT62; -80V(Min)- BDT62A; CEO(SUS) -100V(Min)- BDT62B; -120V(Min)- BDT62C Complement to Type BDT63/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desig

Другие транзисторы: BDT61L, BDT62, BDT62A, BDT62AF, BDT62B, BDT62BF, BDT62C, BDT62CF, BC556, BDT63, BDT63A, BDT63AF, BDT63B, BDT63BF, BDT63C, BDT63CF, BDT63F