BDT63A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDT63A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 90 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10 MHz
Ganancia de corriente contínua (hfe): 2000
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar BDT63A
BDT63A Datasheet (PDF)
bdt63 bdt63a bdt63b bdt63c.pdf
isc Silicon NPN Darlington Power Transistor BDT63/A/B/CDESCRIPTIONCollector Current -I = 10ACHigh DC Current Gain-h = 1000(Min)@ I = 3AFE CComplement to Type BDT62/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general purposeamplifier applicationsABSOLUTE MAXIMUM RATINGS(T
bdt63f bdt63af bdt63bf bdt63cf.pdf
INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Darlington Power Transistor BDT63F/A/B/CDESCRIPTIONCollector Current -I = 10ACHigh DC Current Gain-h = 1000(Min)@ I = 10AFE CComplement to Type BDT62F/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general purpose
bdt63 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDT63/A/B/C DESCRIPTION Collector Current -IC= 10A High DC Current Gain-hFE= 1000(Min)@ IC= 3A Complement to Type BDT62/A/B/C APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNI
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
