All Transistors. BDT63A Datasheet

 

BDT63A Datasheet and Replacement


   Type Designator: BDT63A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 90 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TO220
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BDT63A Datasheet (PDF)

 ..1. Size:215K  inchange semiconductor
 bdt63 bdt63a bdt63b bdt63c.pdf pdf_icon

BDT63A

isc Silicon NPN Darlington Power Transistor BDT63/A/B/CDESCRIPTIONCollector Current -I = 10ACHigh DC Current Gain-h = 1000(Min)@ I = 3AFE CComplement to Type BDT62/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general purposeamplifier applicationsABSOLUTE MAXIMUM RATINGS(T

 0.1. Size:218K  inchange semiconductor
 bdt63f bdt63af bdt63bf bdt63cf.pdf pdf_icon

BDT63A

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Darlington Power Transistor BDT63F/A/B/CDESCRIPTIONCollector Current -I = 10ACHigh DC Current Gain-h = 1000(Min)@ I = 10AFE CComplement to Type BDT62F/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general purpose

 9.1. Size:295K  no
 bdt63.pdf pdf_icon

BDT63A

 9.2. Size:161K  inchange semiconductor
 bdt63 a b c.pdf pdf_icon

BDT63A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDT63/A/B/C DESCRIPTION Collector Current -IC= 10A High DC Current Gain-hFE= 1000(Min)@ IC= 3A Complement to Type BDT62/A/B/C APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNI

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