BDT63A - аналоги, параметры транзистора - Справочник транзисторов

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isc Silicon NPN Darlington Power Transistor BDT63/A/B/C DESCRIPTION Collector Current -I = 10A C High DC Current Gain-h = 1000(Min)@ I = 3A FE C Complement to Type BDT62/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(T

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDT63F/A/B/C DESCRIPTION Collector Current -I = 10A C High DC Current Gain-h = 1000(Min)@ I = 10A FE C Complement to Type BDT62F/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general purpose

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDT63/A/B/C DESCRIPTION Collector Current -IC= 10A High DC Current Gain-hFE= 1000(Min)@ IC= 3A Complement to Type BDT62/A/B/C APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNI

Другие транзисторы: BDT62A, BDT62AF, BDT62B, BDT62BF, BDT62C, BDT62CF, BDT62F, BDT63, 2SD669, BDT63AF, BDT63B, BDT63BF, BDT63C, BDT63CF, BDT63F, BDT63-TO63, BDT64