BDT81F. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

BDT81F datasheet

..1. Size:215K inchange semiconductor
bdt81f bdt83f bdt85f bdt87f.pdf pdf_icon

isc Silicon NPN Power Transistors BDT81F/83F/85F/87F DESCRIPTION DC Current Gain -h = 40(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min)- BDT81F; 80V(Min)- BDT83F; CEO(SUS) 100V(Min)- BDT85F; 120V(Min)- BDT87F Complement to Type BDT82F/84F/86F/88F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed

9.1. Size:353K comset
bdt81-bdt82-bdt83-bdt84-bdt85-bdt86-bdt87-bdt88.pdf pdf_icon

PNP BDT82 BDT84 BDT86 BDT88 NPN BDT81 BDT83 BDT85 BDT87 SILICON POWER TRANSISTOR SILICON POWER TRANSISTOR The BDT82 BDT84 BDT86 BDT88 are PNP epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications. NPN complements are BDT81 BDT83 BDT85 BDT87.

9.2. Size:214K inchange semiconductor
bdt81 bdt83 bdt85 bdt87.pdf pdf_icon

isc Silicon NPN Power Transistors BDT81/83/85/87 DESCRIPTION DC Current Gain -h = 40(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min)- BDT81; 80V(Min)- BDT83; CEO(SUS) 100V(Min)- BDT85; 120V(Min)- BDT87 Complement to Type BDT82/84/86/88 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in

Otros transistores... BDT65A , BDT65AF , BDT65B , BDT65BF , BDT65C , BDT65CF , BDT65F , BDT81 , 2N2222 , BDT82 , BDT82F , BDT83 , BDT83F , BDT84 , BDT84F , BDT85 , BDT85F .