BDT81F Specs and Replacement
Type Designator: BDT81F
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 21 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO220F
BDT81F Substitution
- BJT ⓘ Cross-Reference Search
BDT81F datasheet
bdt81f bdt83f bdt85f bdt87f.pdf 
isc Silicon NPN Power Transistors BDT81F/83F/85F/87F DESCRIPTION DC Current Gain -h = 40(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min)- BDT81F; 80V(Min)- BDT83F; CEO(SUS) 100V(Min)- BDT85F; 120V(Min)- BDT87F Complement to Type BDT82F/84F/86F/88F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed... See More ⇒
bdt81-bdt82-bdt83-bdt84-bdt85-bdt86-bdt87-bdt88.pdf
PNP BDT82 BDT84 BDT86 BDT88 NPN BDT81 BDT83 BDT85 BDT87 SILICON POWER TRANSISTOR SILICON POWER TRANSISTOR The BDT82 BDT84 BDT86 BDT88 are PNP epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications. NPN complements are BDT81 BDT83 BDT85 BDT87. ... See More ⇒
isc Silicon NPN Power Transistors BDT81/83/85/87 DESCRIPTION DC Current Gain -h = 40(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min)- BDT81; 80V(Min)- BDT83; CEO(SUS) 100V(Min)- BDT85; 120V(Min)- BDT87 Complement to Type BDT82/84/86/88 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in ... See More ⇒
Detailed specifications: BDT65A, BDT65AF, BDT65B, BDT65BF, BDT65C, BDT65CF, BDT65F, BDT81, 2N2222, BDT82, BDT82F, BDT83, BDT83F, BDT84, BDT84F, BDT85, BDT85F
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