BDT95 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BDT95

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 90 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO220

 Búsqueda de reemplazo de BDT95

- Selecciónⓘ de transistores por parámetros

 

BDT95 datasheet

 ..1. Size:203K  no
 bdt95.pdf pdf_icon

BDT95

 ..2. Size:214K  inchange semiconductor
 bdt91 bdt93 bdt95.pdf pdf_icon

BDT95

isc Silicon NPN Power Transistor BDT91/93/95 DESCRIPTION DC Current Gain- h = 20 200@ I = 4A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min)- BDT91; 80V(Min)- BDT93; CEO(SUS) 100V(Min)- BDT95 Complement to Type BDT92/94/96 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output stages and ge

 0.1. Size:215K  inchange semiconductor
 bdt91f bdt93f bdt95f.pdf pdf_icon

BDT95

isc Silicon NPN Power Transistor BDT91F/93F/95F DESCRIPTION DC Current Gain- h = 20 200@ I = 4A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min)- BDT91F; 80V(Min)- BDT93F; CEO(SUS) 100V(Min)- BDT95F Complement to Type BDT92F/94F/96F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output stag

Otros transistores... BDT91, BDT91F, BDT92, BDT92F, BDT93, BDT93F, BDT94, BDT94F, TIP31C, BDT95F, BDT96, BDT96F, BDV10, BDV11, BDV12, BDV13, BDV14