BDT95 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDT95
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO220
BDT95 Transistor Equivalent Substitute - Cross-Reference Search
BDT95 Datasheet (PDF)
bdt91 bdt93 bdt95.pdf
isc Silicon NPN Power Transistor BDT91/93/95DESCRIPTIONDC Current Gain- h = 20~200@ I = 4AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)- BDT91; 80V(Min)- BDT93;CEO(SUS)100V(Min)- BDT95Complement to Type BDT92/94/96Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio output stages and ge
bdt91f bdt93f bdt95f.pdf
isc Silicon NPN Power Transistor BDT91F/93F/95FDESCRIPTIONDC Current Gain- h = 20~200@ I = 4AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)- BDT91F; 80V(Min)- BDT93F;CEO(SUS)100V(Min)- BDT95FComplement to Type BDT92F/94F/96FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio output stag
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
