BDT95 Datasheet. Specs and Replacement

Type Designator: BDT95

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 90 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO220

 BDT95 Substitution

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BDT95 datasheet

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BDT95

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BDT95

isc Silicon NPN Power Transistor BDT91/93/95 DESCRIPTION DC Current Gain- h = 20 200@ I = 4A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min)- BDT91; 80V(Min)- BDT93; CEO(SUS) 100V(Min)- BDT95 Complement to Type BDT92/94/96 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output stages and ge... See More ⇒

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BDT95

isc Silicon NPN Power Transistor BDT91F/93F/95F DESCRIPTION DC Current Gain- h = 20 200@ I = 4A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min)- BDT91F; 80V(Min)- BDT93F; CEO(SUS) 100V(Min)- BDT95F Complement to Type BDT92F/94F/96F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output stag... See More ⇒

Detailed specifications: BDT91, BDT91F, BDT92, BDT92F, BDT93, BDT93F, BDT94, BDT94F, TIP31C, BDT95F, BDT96, BDT96F, BDV10, BDV11, BDV12, BDV13, BDV14

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