BDT95F Todos los transistores

 

BDT95F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BDT95F
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Corriente del colector DC máxima (Ic): 10 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 4 MHz
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO220F
 

 Búsqueda de reemplazo de BDT95F

   - Selección ⓘ de transistores por parámetros

 

BDT95F Datasheet (PDF)

 ..1. Size:215K  inchange semiconductor
 bdt91f bdt93f bdt95f.pdf pdf_icon

BDT95F

isc Silicon NPN Power Transistor BDT91F/93F/95FDESCRIPTIONDC Current Gain- h = 20~200@ I = 4AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)- BDT91F; 80V(Min)- BDT93F;CEO(SUS)100V(Min)- BDT95FComplement to Type BDT92F/94F/96FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio output stag

 9.1. Size:203K  no
 bdt95.pdf pdf_icon

BDT95F

 9.2. Size:214K  inchange semiconductor
 bdt91 bdt93 bdt95.pdf pdf_icon

BDT95F

isc Silicon NPN Power Transistor BDT91/93/95DESCRIPTIONDC Current Gain- h = 20~200@ I = 4AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)- BDT91; 80V(Min)- BDT93;CEO(SUS)100V(Min)- BDT95Complement to Type BDT92/94/96Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio output stages and ge

Otros transistores... BDT91F , BDT92 , BDT92F , BDT93 , BDT93F , BDT94 , BDT94F , BDT95 , 2SD1047 , BDT96 , BDT96F , BDV10 , BDV11 , BDV12 , BDV13 , BDV14 , BDV15 .

 

 
Back to Top

 


 
.