BDT95F Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDT95F
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 4 MHz
Ganancia de corriente contínua (hFE): 20
Encapsulados: TO220F
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BDT95F datasheet
bdt91f bdt93f bdt95f.pdf
isc Silicon NPN Power Transistor BDT91F/93F/95F DESCRIPTION DC Current Gain- h = 20 200@ I = 4A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min)- BDT91F; 80V(Min)- BDT93F; CEO(SUS) 100V(Min)- BDT95F Complement to Type BDT92F/94F/96F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output stag
bdt91 bdt93 bdt95.pdf
isc Silicon NPN Power Transistor BDT91/93/95 DESCRIPTION DC Current Gain- h = 20 200@ I = 4A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min)- BDT91; 80V(Min)- BDT93; CEO(SUS) 100V(Min)- BDT95 Complement to Type BDT92/94/96 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output stages and ge
Otros transistores... BDT91F , BDT92 , BDT92F , BDT93 , BDT93F , BDT94 , BDT94F , BDT95 , 2N2222A , BDT96 , BDT96F , BDV10 , BDV11 , BDV12 , BDV13 , BDV14 , BDV15 .
History: 2SD362
History: 2SD362
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