BDT95F Datasheet. Specs and Replacement

Type Designator: BDT95F

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO220F

 BDT95F Substitution

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BDT95F datasheet

 ..1. Size:215K  inchange semiconductor

 bdt91f bdt93f bdt95f.pdf pdf_icon

BDT95F

isc Silicon NPN Power Transistor BDT91F/93F/95F DESCRIPTION DC Current Gain- h = 20 200@ I = 4A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min)- BDT91F; 80V(Min)- BDT93F; CEO(SUS) 100V(Min)- BDT95F Complement to Type BDT92F/94F/96F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output stag... See More ⇒

 9.1. Size:203K  no

 bdt95.pdf pdf_icon

BDT95F

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 9.2. Size:214K  inchange semiconductor

 bdt91 bdt93 bdt95.pdf pdf_icon

BDT95F

isc Silicon NPN Power Transistor BDT91/93/95 DESCRIPTION DC Current Gain- h = 20 200@ I = 4A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min)- BDT91; 80V(Min)- BDT93; CEO(SUS) 100V(Min)- BDT95 Complement to Type BDT92/94/96 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output stages and ge... See More ⇒

Detailed specifications: BDT91F, BDT92, BDT92F, BDT93, BDT93F, BDT94, BDT94F, BDT95, 2N2222A, BDT96, BDT96F, BDV10, BDV11, BDV12, BDV13, BDV14, BDV15

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