BDT96F Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BDT96F

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 20 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO220F

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BDT96F datasheet

 ..1. Size:217K  inchange semiconductor
 bdt92f bdt94f bdt96f.pdf pdf_icon

BDT96F

isc Silicon PNP Power Transistor BDT92F/94F/96F DESCRIPTION DC Current Gain- h = 20 200@ I = -4A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min)- BDT92F; -80V(Min)- BDT94F; CEO(SUS) -100V(Min)- BDT96F Complement to Type BDT91F/93F/95F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output

 9.1. Size:217K  inchange semiconductor
 bdt92 bdt94 bdt96.pdf pdf_icon

BDT96F

isc Silicon PNP Power Transistor BDT92/94/96 DESCRIPTION DC Current Gain- h = 20 200@ I = -4A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min)- BDT92; -80V(Min)- BDT94; CEO(SUS) -100V(Min)- BDT96 Complement to Type BDT91/93/95 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output stages an

Otros transistores... BDT92F, BDT93, BDT93F, BDT94, BDT94F, BDT95, BDT95F, BDT96, 13003, BDV10, BDV11, BDV12, BDV13, BDV14, BDV15, BDV16, BDV17