All Transistors. BDT96F Datasheet

 

BDT96F Datasheet and Replacement


   Type Designator: BDT96F
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO220F
 

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BDT96F Datasheet (PDF)

 ..1. Size:217K  inchange semiconductor
 bdt92f bdt94f bdt96f.pdf pdf_icon

BDT96F

isc Silicon PNP Power Transistor BDT92F/94F/96FDESCRIPTIONDC Current Gain- h = 20~200@ I = -4AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)- BDT92F; -80V(Min)- BDT94F;CEO(SUS)-100V(Min)- BDT96FComplement to Type BDT91F/93F/95FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio output

 9.1. Size:217K  inchange semiconductor
 bdt92 bdt94 bdt96.pdf pdf_icon

BDT96F

isc Silicon PNP Power Transistor BDT92/94/96DESCRIPTIONDC Current Gain- h = 20~200@ I = -4AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)- BDT92; -80V(Min)- BDT94;CEO(SUS)-100V(Min)- BDT96Complement to Type BDT91/93/95Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio output stages an

Datasheet: BDT92F , BDT93 , BDT93F , BDT94 , BDT94F , BDT95 , BDT95F , BDT96 , S8050 , BDV10 , BDV11 , BDV12 , BDV13 , BDV14 , BDV15 , BDV16 , BDV17 .

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