BDT96F Datasheet. Specs and Replacement
Type Designator: BDT96F
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO220F
BDT96F Substitution
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BDT96F datasheet
isc Silicon PNP Power Transistor BDT92F/94F/96F DESCRIPTION DC Current Gain- h = 20 200@ I = -4A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min)- BDT92F; -80V(Min)- BDT94F; CEO(SUS) -100V(Min)- BDT96F Complement to Type BDT91F/93F/95F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output ... See More ⇒
isc Silicon PNP Power Transistor BDT92/94/96 DESCRIPTION DC Current Gain- h = 20 200@ I = -4A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min)- BDT92; -80V(Min)- BDT94; CEO(SUS) -100V(Min)- BDT96 Complement to Type BDT91/93/95 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output stages an... See More ⇒
Detailed specifications: BDT92F, BDT93, BDT93F, BDT94, BDT94F, BDT95, BDT95F, BDT96, 13003, BDV10, BDV11, BDV12, BDV13, BDV14, BDV15, BDV16, BDV17
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