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BDV66C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BDV66C
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 200 W
   Tensión colector-base (Vcb): 140 V
   Tensión colector-emisor (Vce): 120 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 16 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 2000
   Paquete / Cubierta: TOP3

 Búsqueda de reemplazo de transistor bipolar BDV66C

 

BDV66C Datasheet (PDF)

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bdv66 bdv66a bdv66b bdv66c.pdf

BDV66C
BDV66C

isc Silicon PNP Darlington Power Transistor BDV66/A/B/CDESCRIPTIONCollector Current -I = -16ACCollector-Emitter Saturation Voltage-: V = -2.0V(Max.)@ I = -10ACE(sat) CComplement to Type BDV67/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching appli

 9.1. Size:102K  mospec
bdv66 bdv67.pdf

BDV66C
BDV66C

AAA

 9.2. Size:158K  inchange semiconductor
bdv66 a b c.pdf

BDV66C
BDV66C

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDV66/A/B/C DESCRIPTION Collector Current -IC= -16A Collector-Emitter Saturation Voltage- : VCE(sat)= -2.0V(Max.)@ IC= -10A Complement to Type BDV67/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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