BDV66C Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BDV66C

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 200 W

Tensión colector-base (Vcb): 140 V

Tensión colector-emisor (Vce): 120 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 16 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 2000

Encapsulados: TOP3

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BDV66C datasheet

 ..1. Size:224K  inchange semiconductor
 bdv66 bdv66a bdv66b bdv66c.pdf pdf_icon

BDV66C

isc Silicon PNP Darlington Power Transistor BDV66/A/B/C DESCRIPTION Collector Current -I = -16A C Collector-Emitter Saturation Voltage- V = -2.0V(Max.)@ I = -10A CE(sat) C Complement to Type BDV67/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching appli

 9.1. Size:102K  mospec
 bdv66 bdv67.pdf pdf_icon

BDV66C

A A A

 9.2. Size:158K  inchange semiconductor
 bdv66 a b c.pdf pdf_icon

BDV66C

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDV66/A/B/C DESCRIPTION Collector Current -IC= -16A Collector-Emitter Saturation Voltage- VCE(sat)= -2.0V(Max.)@ IC= -10A Complement to Type BDV67/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(

Otros transistores... BDV64C, BDV65, BDV65A, BDV65B, BDV65C, BDV66, BDV66A, BDV66B, 2SC2655, BDV66D, BDV67, BDV67A, BDV67B, BDV67C, BDV67D, BDV91, BDV92