BDV66C Todos los transistores

 

BDV66C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BDV66C
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 200 W
   Tensión colector-base (Vcb): 140 V
   Tensión colector-emisor (Vce): 120 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 16 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 2000
   Paquete / Cubierta: TOP3
 

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BDV66C Datasheet (PDF)

 ..1. Size:224K  inchange semiconductor
 bdv66 bdv66a bdv66b bdv66c.pdf pdf_icon

BDV66C

isc Silicon PNP Darlington Power Transistor BDV66/A/B/CDESCRIPTIONCollector Current -I = -16ACCollector-Emitter Saturation Voltage-: V = -2.0V(Max.)@ I = -10ACE(sat) CComplement to Type BDV67/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching appli

 9.1. Size:102K  mospec
 bdv66 bdv67.pdf pdf_icon

BDV66C

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 9.2. Size:158K  inchange semiconductor
 bdv66 a b c.pdf pdf_icon

BDV66C

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDV66/A/B/C DESCRIPTION Collector Current -IC= -16A Collector-Emitter Saturation Voltage- : VCE(sat)= -2.0V(Max.)@ IC= -10A Complement to Type BDV67/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(

Otros transistores... BDV64C , BDV65 , BDV65A , BDV65B , BDV65C , BDV66 , BDV66A , BDV66B , 8550 , BDV66D , BDV67 , BDV67A , BDV67B , BDV67C , BDV67D , BDV91 , BDV92 .

History: T1314 | BUS37 | 2SC4108L | MMBT8550LT1 | BSS44 | KT814G9 | 2SC4116-Y

 

 
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