All Transistors. BDV66C Datasheet

 

BDV66C Datasheet and Replacement


   Type Designator: BDV66C
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 200 W
   Maximum Collector-Base Voltage |Vcb|: 140 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 16 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TOP3
 

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BDV66C Datasheet (PDF)

 ..1. Size:224K  inchange semiconductor
 bdv66 bdv66a bdv66b bdv66c.pdf pdf_icon

BDV66C

isc Silicon PNP Darlington Power Transistor BDV66/A/B/CDESCRIPTIONCollector Current -I = -16ACCollector-Emitter Saturation Voltage-: V = -2.0V(Max.)@ I = -10ACE(sat) CComplement to Type BDV67/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching appli

 9.1. Size:102K  mospec
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BDV66C

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 9.2. Size:158K  inchange semiconductor
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BDV66C

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDV66/A/B/C DESCRIPTION Collector Current -IC= -16A Collector-Emitter Saturation Voltage- : VCE(sat)= -2.0V(Max.)@ IC= -10A Complement to Type BDV67/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(

Datasheet: BDV64C , BDV65 , BDV65A , BDV65B , BDV65C , BDV66 , BDV66A , BDV66B , 8550 , BDV66D , BDV67 , BDV67A , BDV67B , BDV67C , BDV67D , BDV91 , BDV92 .

History: BUX24X | MMBT918LT1G | 2SC4076 | 2SC4092 | T1382 | 2SC3891 | MMBT5088LT1G

Keywords - BDV66C transistor datasheet

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