BDV67C Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDV67C
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 200 W
Tensión colector-base (Vcb): 140 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 16 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 2000
Encapsulados: TOP3
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BDV67C datasheet
bdv67 bdv67a bdv67b bdv67c.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDV67/A/B/C DESCRIPTION Collector Current -I = 16A C Collector-Emitter Saturation Voltage- V = 2.0V(Max.)@ I = 10A CE(sat) C Complement to Type BDV66/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier
bdv67 bdv67d.pdf
isc Silicon NPN Darlington Power Transistor BDV67D DESCRIPTION Collector Current -I = 16A C Collector-Emitter Saturation Voltage- V = 2.0V(Max.)@ I = 10A CE(sat) C Complement to Type BDV66D Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSO
bdv67 67a 67b 67c 67d.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDV67/67A/67B/67C/67D DESCRIPTION With TO-3PN package Complement to type BDV66/66A/66B/66C/66D DARLINGTON High DC current gain APPLICATIONS For use in audio output stages and general amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounti
Otros transistores... BDV66 , BDV66A , BDV66B , BDV66C , BDV66D , BDV67 , BDV67A , BDV67B , 2222A , BDV67D , BDV91 , BDV92 , BDV93 , BDV94 , BDV95 , BDV96 , BDW10 .
History: ZT1485
History: ZT1485
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