BDV67C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDV67C
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 200 W
Tensión colector-base (Vcb): 140 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 16 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 2000
Paquete / Cubierta: TOP3
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BDV67C Datasheet (PDF)
bdv67 bdv67a bdv67b bdv67c.pdf
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INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDV67/A/B/CDESCRIPTIONCollector Current -I = 16ACCollector-Emitter Saturation Voltage-: V = 2.0V(Max.)@ I = 10ACE(sat) CComplement to Type BDV66/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifier
bdv67 bdv67d.pdf
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isc Silicon NPN Darlington Power Transistor BDV67DDESCRIPTIONCollector Current -I = 16ACCollector-Emitter Saturation Voltage-: V = 2.0V(Max.)@ I = 10ACE(sat) CComplement to Type BDV66DMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSO
bdv67 67a 67b 67c 67d.pdf
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Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDV67/67A/67B/67C/67D DESCRIPTION With TO-3PN package Complement to type BDV66/66A/66B/66C/66D DARLINGTON High DC current gain APPLICATIONS For use in audio output stages and general amplifier and switching applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounti
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .