BDV67C Specs and Replacement
Type Designator: BDV67C
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 16 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 2000
Package: TOP3
BDV67C Substitution
- BJT ⓘ Cross-Reference Search
BDV67C datasheet
bdv67 bdv67a bdv67b bdv67c.pdf 
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDV67/A/B/C DESCRIPTION Collector Current -I = 16A C Collector-Emitter Saturation Voltage- V = 2.0V(Max.)@ I = 10A CE(sat) C Complement to Type BDV66/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier... See More ⇒
isc Silicon NPN Darlington Power Transistor BDV67D DESCRIPTION Collector Current -I = 16A C Collector-Emitter Saturation Voltage- V = 2.0V(Max.)@ I = 10A CE(sat) C Complement to Type BDV66D Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSO... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDV67/67A/67B/67C/67D DESCRIPTION With TO-3PN package Complement to type BDV66/66A/66B/66C/66D DARLINGTON High DC current gain APPLICATIONS For use in audio output stages and general amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounti... See More ⇒
Detailed specifications: BDV66, BDV66A, BDV66B, BDV66C, BDV66D, BDV67, BDV67A, BDV67B, 2222A, BDV67D, BDV91, BDV92, BDV93, BDV94, BDV95, BDV96, BDW10
Keywords - BDV67C pdf specs
BDV67C cross reference
BDV67C equivalent finder
BDV67C pdf lookup
BDV67C substitution
BDV67C replacement
