BDW46. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

BDW46 datasheet

..1. Size:176K motorola
bdw42 bdw46 bdw47.pdf pdf_icon

Order this document MOTOROLA by BDW42/D SEMICONDUCTOR TECHNICAL DATA NPN BDW42* Darlington Complementary PNP Silicon Power Transistors BDW46 . . . designed for general purpose and low speed switching applications. High DC Current Gain hFE = 2500 (typ.) @ IC = 5.0 Adc. BDW47* Collector Emitter Sustaining Voltage @ 30 mAdc *Motorola Preferred Device VCEO(sus) = 80 Vdc (

..2. Size:212K inchange semiconductor
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isc Silicon PNP Darlington Power Transistor BDW46 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) High DC Current Gain h = 1000(Min) @I = -5A FE C Low Collector Saturation Voltage V = -2.0V(Max.)@ I = -5.0A CE(sat) C = -3.0V(Max.)@ I = -10A C Complement to Type BDW41 Minimum Lot-to-Lot variations for robust device performance and reliable

0.1. Size:147K onsemi
bdw46g.pdf pdf_icon

BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium-power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed http //onsemi.com switching applications. Features 15 AMP DARLINGTON High DC Current Gain - hFE = 2500 (typ) @ IC = 5.0 Adc. COMPLEMENTARY SILICON Collector Emitter

Otros transistores... BDW36 , BDW39 , BDW40 , BDW41 , BDW42 , BDW43 , BDW44 , BDW45 , S8050 , BDW48 , BDW51 , BDW51A , BDW51B , BDW51C , BDW52 , BDW52A , BDW52C .