BDW46 Datasheet. Specs and Replacement
Type Designator: BDW46
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 85 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 2000
Package: TO220
BDW46 Substitution
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BDW46 datasheet
Order this document MOTOROLA by BDW42/D SEMICONDUCTOR TECHNICAL DATA NPN BDW42* Darlington Complementary PNP Silicon Power Transistors BDW46 . . . designed for general purpose and low speed switching applications. High DC Current Gain hFE = 2500 (typ.) @ IC = 5.0 Adc. BDW47* Collector Emitter Sustaining Voltage @ 30 mAdc *Motorola Preferred Device VCEO(sus) = 80 Vdc (... See More ⇒
isc Silicon PNP Darlington Power Transistor BDW46 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) High DC Current Gain h = 1000(Min) @I = -5A FE C Low Collector Saturation Voltage V = -2.0V(Max.)@ I = -5.0A CE(sat) C = -3.0V(Max.)@ I = -10A C Complement to Type BDW41 Minimum Lot-to-Lot variations for robust device performance and reliable ... See More ⇒
BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium-power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed http //onsemi.com switching applications. Features 15 AMP DARLINGTON High DC Current Gain - hFE = 2500 (typ) @ IC = 5.0 Adc. COMPLEMENTARY SILICON Collector Emitter... See More ⇒
Detailed specifications: BDW36, BDW39, BDW40, BDW41, BDW42, BDW43, BDW44, BDW45, S8050, BDW48, BDW51, BDW51A, BDW51B, BDW51C, BDW52, BDW52A, BDW52C
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