All Transistors. BDW46 Datasheet

 

BDW46 Datasheet and Replacement


   Type Designator: BDW46
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 85 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TO220
 

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BDW46 Datasheet (PDF)

 ..1. Size:176K  motorola
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BDW46

Order this documentMOTOROLAby BDW42/DSEMICONDUCTOR TECHNICAL DATANPNBDW42*Darlington ComplementaryPNPSilicon Power TransistorsBDW46. . . designed for general purpose and low speed switching applications. High DC Current Gain hFE = 2500 (typ.) @ IC = 5.0 Adc. BDW47* Collector Emitter Sustaining Voltage @ 30 mAdc:*Motorola Preferred DeviceVCEO(sus) = 80 Vdc (

 ..2. Size:212K  inchange semiconductor
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BDW46

isc Silicon PNP Darlington Power Transistor BDW46DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -80V(Min)CEO(SUS)High DC Current Gain: h = 1000(Min) @I = -5AFE CLow Collector Saturation Voltage: V = -2.0V(Max.)@ I = -5.0ACE(sat) C= -3.0V(Max.)@ I = -10ACComplement to Type BDW41Minimum Lot-to-Lot variations for robust deviceperformance and reliable

 0.1. Size:147K  onsemi
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BDW46

BDW42G - NPN, BDW46G,BDW47G - PNPDarlington ComplementarySilicon Power TransistorsThis series of plastic, medium-power silicon NPN and PNPDarlington transistors are designed for general purpose and low speedhttp://onsemi.comswitching applications.Features15 AMP DARLINGTON High DC Current Gain - hFE = 2500 (typ) @ IC = 5.0 Adc.COMPLEMENTARY SILICON Collector Emitter

Datasheet: BDW36 , BDW39 , BDW40 , BDW41 , BDW42 , BDW43 , BDW44 , BDW45 , BD140 , BDW48 , BDW51 , BDW51A , BDW51B , BDW51C , BDW52 , BDW52A , BDW52C .

History: 2SC1957 | BC857BQA | MMBT5134 | BC856BM | 2SC3798 | 2SD1724S | 2SC4288

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