BDX33C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon NPN Darlington Power Transistor BDX33C DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) High DC Current Gain h = 750(Min) @I = 3A FE C Complement to Type BDX34C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applications.

BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. http //onsemi.com Features DARLINGTON High DC Current Gain - hFE = 2500 (typ.) at IC = 4.0 10 AMPERE Collector-Emitter Sustaining Voltage at 100 mAdc COMPLEMENTARY SILICON VCEO(sus) = 80 Vdc (min) -

Order this document MOTOROLA by BDX33B/D SEMICONDUCTOR TECHNICAL DATA NPN BDX33B Darlington Complementary Silicon Power Transistors BDX33C* PNP . . . designed for general purpose and low speed switching applications. BDX34B High DC Current Gain hFE = 2500 (typ.) at IC = 4.0 Collector Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) BDX33B, 34B BD

BDX33B BDX33C BDX34B BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. 3 2 The complementary P

BDX33/A/B/C Power Linear and Switching Applications High Gain General Purpose Power Darlington TR Complement to BDX34/34A/34B/34C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BDX33 45 V BDX33A 60 V BDX33B 80 V

BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. http //onsemi.com Features DARLINGTON High DC Current Gain - hFE = 2500 (typ.) at IC = 4.0 10 AMPERE Collector-Emitter Sustaining Voltage at 100 mAdc COMPLEMENTARY SILICON VCEO(sus) = 80 Vdc (min) -

NPN BDX33 BDX33A BDX33B BDX33C PNP BDX34 BDX34A BDX34B BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO- 220 plastic package. They are intented for use in power linear and switching applications. The com

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN/PNP PLASTIC POWER TRANSISTORS BDX33, 33A, 33B, 33C, 33D BDX34, 34A, 34B, 34C, 34D TO-220 Plastic Package Power Darlington for Linear Switchilng Application ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BDX33 BDX33A BDX33B BDX33C BDX33D UNIT BDX34 BDX34A BDX34B BDX34C BDX34D Collector -Emitter

isc Silicon NPN Darlington Power Transistor BDX33A DESCRIPTION Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) High DC Current Gain h = 750(Min) @I = 4A FE C Low Collector Saturation Voltage V = 2.5V(Max.)@ I = 4A CE(sat) C Complement to Type BDX34A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Design

isc Silicon NPN Darlington Power Transistor BDX33D DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) High DC Current Gain h = 750(Min) @I = 3A FE C Low Collector Saturation Voltage V = 2.5V(Max.)@ I = 3A CE(sat) C Complement to Type BDX34D Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desig

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX33/A/B/C DESCRIPTION With TO-220C package High DC current gain DARLINGTON Complement to type BDX34/A/B/C APPLICATIONS For power linear and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 )

isc Silicon NPN Darlington Power Transistor BDX33 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 45V(Min) CEO(SUS) High DC Current Gain h = 750(Min) @I = 4A FE C Low Collector Saturation Voltage V = 2.5V(Max.)@ I = 4A CE(sat) C Complement to Type BDX34 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed

isc Silicon NPN Darlington Power Transistor BDX33B DESCRIPTION Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) High DC Current Gain h = 750(Min) @I = 3A FE C Low Collector Saturation Voltage V = 2.5V(Max.)@ I = 3A CE(sat) C Complement to Type BDX34B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Design