BDX33C Datasheet and Replacement

isc Silicon NPN Darlington Power Transistor BDX33CDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)High DC Current Gain: h = 750(Min) @I = 3AFE CComplement to Type BDX34CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applications.

BDX33B, BDX33C (NPN)BDX34B, BDX34C (PNP)Darlington ComplementarySilicon Power TransistorsThese devices are designed for general purpose and low speedswitching applications. http://onsemi.comFeaturesDARLINGTON High DC Current Gain - hFE = 2500 (typ.) at IC = 4.010 AMPERE Collector-Emitter Sustaining Voltage at 100 mAdcCOMPLEMENTARY SILICONVCEO(sus) = 80 Vdc (min) -

Order this documentMOTOROLAby BDX33B/DSEMICONDUCTOR TECHNICAL DATANPNBDX33BDarlington ComplementarySilicon Power TransistorsBDX33C*PNP. . . designed for general purpose and low speed switching applications.BDX34B High DC Current Gain hFE = 2500 (typ.) at IC = 4.0 CollectorEmitter Sustaining Voltage at 100 mAdcVCEO(sus) = 80 Vdc (min.) BDX33B, 34BBD

BDX33B BDX33CBDX34B BDX34C COMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPESDESCRIPTIONThe BDX33B and BDX33C are siliconepitaxial-base NPN power transistors inmonolithic Darlington configuration and aremounted in Jedec TO-220 plastic package. Theyare intented for use in power linear and switchingapplications.32The complementary P

BDX33/A/B/CPower Linear and Switching Applications High Gain General Purpose Power Darlington TR Complement to BDX34/34A/34B/34C respectivelyTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage: BDX33 45 V: BDX33A 60 V: BDX33B 80 V

BDX33B, BDX33C (NPN)BDX34B, BDX34C (PNP)Darlington ComplementarySilicon Power TransistorsThese devices are designed for general purpose and low speedswitching applications. http://onsemi.comFeaturesDARLINGTON High DC Current Gain - hFE = 2500 (typ.) at IC = 4.010 AMPERE Collector-Emitter Sustaining Voltage at 100 mAdcCOMPLEMENTARY SILICONVCEO(sus) = 80 Vdc (min) -

NPN BDX33 BDX33A BDX33B BDX33C PNP BDX34 BDX34A BDX34B BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The com

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN/PNP PLASTIC POWER TRANSISTORS BDX33, 33A, 33B, 33C, 33DBDX34, 34A, 34B, 34C, 34DTO-220Plastic PackagePower Darlington for Linear Switchilng ApplicationABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BDX33 BDX33A BDX33B BDX33C BDX33D UNITBDX34 BDX34A BDX34B BDX34C BDX34DCollector -Emitter

isc Silicon NPN Darlington Power Transistor BDX33ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)High DC Current Gain: h = 750(Min) @I = 4AFE CLow Collector Saturation Voltage: V = 2.5V(Max.)@ I = 4ACE(sat) CComplement to Type BDX34AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesign

isc Silicon NPN Darlington Power Transistor BDX33DDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)High DC Current Gain: h = 750(Min) @I = 3AFE CLow Collector Saturation Voltage: V = 2.5V(Max.)@ I = 3ACE(sat) CComplement to Type BDX34DMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesig

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX33/A/B/C DESCRIPTION With TO-220C package High DC current gain DARLINGTON Complement to type BDX34/A/B/C APPLICATIONS For power linear and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25)

isc Silicon NPN Darlington Power Transistor BDX33DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 45V(Min)CEO(SUS)High DC Current Gain: h = 750(Min) @I = 4AFE CLow Collector Saturation Voltage: V = 2.5V(Max.)@ I = 4ACE(sat) CComplement to Type BDX34Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned

isc Silicon NPN Darlington Power Transistor BDX33BDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)High DC Current Gain: h = 750(Min) @I = 3AFE CLow Collector Saturation Voltage: V = 2.5V(Max.)@ I = 3ACE(sat) CComplement to Type BDX34BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesign