BDX34 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDX34
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 70 W
Tensión colector-base (Vcb): 45 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20 MHz
Ganancia de corriente contínua (hfe): 750
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar BDX34
BDX34 Datasheet (PDF)
bdx33 bdx34 abcd.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN/PNP PLASTIC POWER TRANSISTORS BDX33, 33A, 33B, 33C, 33D BDX34, 34A, 34B, 34C, 34D TO-220 Plastic Package Power Darlington for Linear Switchilng Application ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BDX33 BDX33A BDX33B BDX33C BDX33D UNIT BDX34 BDX34A BDX34B BDX34C BDX34D Collector -Emitter
bdx34 a b c.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDX34/A/B/C DESCRIPTION With TO-220C package High DC current gain DARLINGTON Complement to type BDX33/A/B/C APPLICATIONS For power linear and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 )
bdx34.pdf
isc Silicon PNP Darlington Power Transistor BDX34 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -45V(Min) CEO(SUS) High DC Current Gain h = 750(Min) @I = -4A FE C Low Collector Saturation Voltage V = -2.5V(Max.)@ I = -4A CE(sat) C Complement to Type BDX33 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desi
bdx33b bdx34b.pdf
Order this document MOTOROLA by BDX33B/D SEMICONDUCTOR TECHNICAL DATA NPN BDX33B Darlington Complementary Silicon Power Transistors BDX33C* PNP . . . designed for general purpose and low speed switching applications. BDX34B High DC Current Gain hFE = 2500 (typ.) at IC = 4.0 Collector Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) BDX33B, 34B BD
Otros transistores... BDX31 , BDX32 , BDX33 , BDX33A , BDX33B , BDX33C , BDX33D , BDX33E , TIP31 , BDX34A , BDX34B , BDX34C , BDX34D , BDX34E , BDX35 , BDX36 , BDX37 .
History: GD160C
History: GD160C
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
mp1620 | kta1381 | bf494 | 2sc1885 | skd502t | 2sb754 | 2sc2362 | 2sd468







