BDX34 Datasheet and Replacement

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN/PNP PLASTIC POWER TRANSISTORS BDX33, 33A, 33B, 33C, 33DBDX34, 34A, 34B, 34C, 34DTO-220Plastic PackagePower Darlington for Linear Switchilng ApplicationABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BDX33 BDX33A BDX33B BDX33C BDX33D UNITBDX34 BDX34A BDX34B BDX34C BDX34DCollector -Emitter

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDX34/A/B/C DESCRIPTION With TO-220C package High DC current gain DARLINGTON Complement to type BDX33/A/B/C APPLICATIONS For power linear and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25)

isc Silicon PNP Darlington Power Transistor BDX34DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -45V(Min)CEO(SUS)High DC Current Gain: h = 750(Min) @I = -4AFE CLow Collector Saturation Voltage: V = -2.5V(Max.)@ I = -4ACE(sat) CComplement to Type BDX33Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesi

Order this documentMOTOROLAby BDX33B/DSEMICONDUCTOR TECHNICAL DATANPNBDX33BDarlington ComplementarySilicon Power TransistorsBDX33C*PNP. . . designed for general purpose and low speed switching applications.BDX34B High DC Current Gain hFE = 2500 (typ.) at IC = 4.0 CollectorEmitter Sustaining Voltage at 100 mAdcVCEO(sus) = 80 Vdc (min.) BDX33B, 34BBD

BDX34/A/B/CPower Linear and Switching Applications High Gain General Purpose Power Darlington TR Complement to BDX33/33A/33B/33C respectivelyTO-22011.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BDX34 - 45 V: BDX34A - 60 V: BDX34B

BDX33B, BDX33C (NPN)BDX34B, BDX34C (PNP)Darlington ComplementarySilicon Power TransistorsThese devices are designed for general purpose and low speedswitching applications. http://onsemi.comFeaturesDARLINGTON High DC Current Gain - hFE = 2500 (typ.) at IC = 4.010 AMPERE Collector-Emitter Sustaining Voltage at 100 mAdcCOMPLEMENTARY SILICONVCEO(sus) = 80 Vdc (min) -

BDX33B, BDX33C (NPN)BDX34B, BDX34C (PNP)Darlington ComplementarySilicon Power TransistorsThese devices are designed for general purpose and low speedswitching applications. http://onsemi.comFeaturesDARLINGTON High DC Current Gain - hFE = 2500 (typ.) at IC = 4.010 AMPERE Collector-Emitter Sustaining Voltage at 100 mAdcCOMPLEMENTARY SILICONVCEO(sus) = 80 Vdc (min) -

NPN BDX33 BDX33A BDX33B BDX33C PNP BDX34 BDX34A BDX34B BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The com

isc Silicon PNP Darlington Power Transistor BDX34CDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)High DC Current Gain: h = 750(Min) @I = -3AFE CLow Collector Saturation Voltage: V = -2.5V(Max.)@ I = -3ACE(sat) CComplement to Type BDX33CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSD

isc Silicon PNP Darlington Power Transistor BDX34BDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -80V(Min)CEO(SUS)High DC Current Gain: h = 750(Min) @I = -3AFE CLow Collector Saturation Voltage: V = -2.5V(Max.)@ I = -3ACE(sat) CComplement to Type BDX33BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDe

isc Silicon PNP Darlington Power Transistor BDX34ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain: h = 750(Min) @I = -4AFE CLow Collector Saturation Voltage: V = -2.5V(Max.)@ I = -4ACE(sat) CComplement to Type BDX33AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDe