BDX53 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDX53 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 60 W
Tensión colector-base (Vcb): 45 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 20 MHz
Ganancia de corriente contínua (hFE): 750
Encapsulados: TO220
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BDX53 datasheet
..1. Size:94K st
bdx53 bdw54.pdf 
BDX53A/53B/53C BDX54B/54C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS BDX53B, BDX53C, BDX54B AND BDX54C ARE SGS-THOMSON PREFERRED SALESTYPES APPLICATIONS AUDIO AMPLIFIERS LINEAR AND SWITCHING INDUSTRIAL 3 2 EQUIPMENT 1 TO-220 DESCRIPTION The BDX53A, BDX53B and BDX53C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are moun
..3. Size:72K cdil
bdx53 bdx54 abc.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BDX53, BDX53A, BDX53B, BDX53C BDX54, BDX54A, BDX54B, BDX54C BDX53, 53A, 53B, 53C NPN PLASTIC POWER TRANSISTORS BDX54, 54A, 54B, 54C PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4
..4. Size:215K inchange semiconductor
bdx53.pdf
isc Silicon NPN Darlington Power Transistor BDX53 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 45V(Min) CEO(sus) High DC Current Gain h = 750(Min) @I = 3A FE C Low Collector Saturation Voltage V = 2.0 V (Max) @ I = 3.0 A CE(sat) C Complement to Type BDX54 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Des
..5. Size:120K inchange semiconductor
bdx53 a b c.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX53/A/B/C DESCRIPTION With TO-220C package High DC current gain DARLINGTON Complement to type BDX54/A/B/C APPLICATIONS Power linear and switching applications Hammer drivers,audio amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absol
0.1. Size:169K motorola
bdx53b bdx54.pdf
Order this document MOTOROLA by BDX53B/D SEMICONDUCTOR TECHNICAL DATA NPN Plastic Medium-Power BDX53B Complementary Silicon Transistors BDX53C PNP . . . designed for general purpose amplifier and low speed switching applications. BDX54B High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 mAdc BDX54C VCEO(sus) = 80
0.2. Size:34K st
bdx53---.pdf
BDX53BFP SILICON POWER DARLINGTON TRANSISTOR APPLICATIONS GENERAL PURPOSE SWITCHING AND AMPLIFIER LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT) 3 DESCRIPTION 2 1 The BDX53BFP is a silicon epitaxial-base NPN power transistor in monolithic Darlington T0-220FP configuration and are mounted in T0-220FP fully molded
0.3. Size:70K st
bdx53f.pdf
BDX53F BDX54F COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL 3 2 EQUIPMENT 1 DESCRIPTION TO-220 The BDX53F is a silicon epitaxial-base NPN power transistors in monolith
0.4. Size:86K st
bdx53bfp.pdf
BDX53BFP SILICON POWER DARLINGTON TRANSISTOR APPLICATIONS GENERAL PURPOSE SWITCHING AND AMPLIFIER LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING 3 DESCRIPTION 2 1 The BDX53BFP is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington T0-220FP configuration mounted in T0-220FP fully molded isolated pa
0.5. Size:43K st
bdx53d bdw54.pdf
BDX53BFI BDX54BFI COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS GENERAL PURPOSE SWITCHING AND AMPLIFIER LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION 3 The BDX53BFI is silicon epitaxial-base NPN 2 1 power transistor in monolithic Darlington configuration and are mounted in ISOWATT220 ISOWATT220 plastic package. It is
0.6. Size:73K st
bdx53b bdx53c bdx54b bdx54c.pdf
BDX53B - BDX53C BDX54B - BDX54C Complementary power Darlington transistors Features Good hFE linearity High fT frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application 3 2 1 Audio amplifiers TO-220 Linear and switching industrial equipment Description The devices are manufactured in planar base island t
0.7. Size:149K fairchild semi
bdx53c.pdf
March 2011 BDX53/A/B/C NPN Epitaxial Silicon Transistor Applications Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications Features Power Darlington TR Complement to BDX54, BDX54A, BDX54B and BDX54C respectively Equivalent Circuit C B TO-220 1 R1 R2 1.Base 2.Collector 3.Emitter R1 8.4k E R2 0.3k Absolute Maximum Ratin
0.8. Size:41K fairchild semi
bdx53a.pdf
BDX53/A/B/C Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications Power Darlington TR Complement to BDX54, BDX54A, BDX54B and BDX54C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BDX53 45 V
0.9. Size:148K onsemi
bdx53bg.pdf
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors http //onsemi.com These devices are designed for general-purpose amplifier and low-speed switching applications. DARLINGTON Features 8 AMPERE High DC Current Gain - COMPLEMENTARY SILICON hFE = 2500 (Typ) @ IC = 4.0 Adc POWER TRANSISTORS Collector Emitter Sustaining Voltage -
0.10. Size:355K onsemi
bdx53b bdx53c bdx54b bdx54c.pdf
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors www.onsemi.com These devices are designed for general-purpose amplifier and low-speed switching applications. DARLINGTON Features 8 AMPERE High DC Current Gain - COMPLEMENTARY SILICON hFE = 2500 (Typ) @ IC = 4.0 Adc POWER TRANSISTORS Collector Emitter Sustaining Voltage - @ 1
0.11. Size:148K onsemi
bdx53cg.pdf
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors http //onsemi.com These devices are designed for general-purpose amplifier and low-speed switching applications. DARLINGTON Features 8 AMPERE High DC Current Gain - COMPLEMENTARY SILICON hFE = 2500 (Typ) @ IC = 4.0 Adc POWER TRANSISTORS Collector Emitter Sustaining Voltage -
0.12. Size:355K onsemi
bdx53bg bdx53cg bdx54bg bdx54cg.pdf
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors www.onsemi.com These devices are designed for general-purpose amplifier and low-speed switching applications. DARLINGTON Features 8 AMPERE High DC Current Gain - COMPLEMENTARY SILICON hFE = 2500 (Typ) @ IC = 4.0 Adc POWER TRANSISTORS Collector Emitter Sustaining Voltage - @ 1
0.13. Size:212K inchange semiconductor
bdx53c.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDX53C DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(sus) High DC Current Gain h = 750(Min) @I = 3A FE C Low Collector Saturation Voltage V = 2.0 V (Max) @ I = 3.0 A CE(sat) C Complement to Type BDX54C Minimum Lot-to-Lot variations for robust device performance and reliable ope
0.14. Size:229K inchange semiconductor
bdx53f.pdf
isc Silicon NPN Darlington Power Transistor BDX53F DESCRIPTION Collector Current -I = 8A C High DC Current Gain- h = 500(Min)@ I = 2A FE C Complement to Type BDX54F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM
0.15. Size:215K inchange semiconductor
bdx53b.pdf
isc Silicon NPN Darlington Power Transistor BDX53B DESCRIPTION Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(sus) High DC Current Gain h = 750(Min) @I = 3A FE C Low Collector Saturation Voltage V = 2.0 V(Max) @ I = 3.0 A CE(sat) C Complement to Type BDX54B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS De
0.16. Size:215K inchange semiconductor
bdx53a.pdf
isc Silicon NPN Darlington Power Transistor BDX53A DESCRIPTION Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(sus) High DC Current Gain h = 750(Min) @I = 3A FE C Low Collector Saturation Voltage V = 2.0 V(Max) @ I = 3.0 A CE(sat) C Complement to Type BDX54A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS De
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