BDX53 Datasheet and Replacement

BDX53A/53B/53CBDX54B/54CCOMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS BDX53B, BDX53C, BDX54B AND BDX54CARE SGS-THOMSON PREFERREDSALESTYPESAPPLICATIONS AUDIO AMPLIFIERS LINEAR AND SWITCHING INDUSTRIAL32EQUIPMENT1TO-220DESCRIPTIONThe BDX53A, BDX53B and BDX53C are siliconepitaxial-base NPN power transistors inmonolithic Darlington configuration and aremoun

AAAA

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package BDX53, BDX53A, BDX53B, BDX53CBDX54, BDX54A, BDX54B, BDX54CBDX53, 53A, 53B, 53C NPN PLASTIC POWER TRANSISTORSBDX54, 54A, 54B, 54C PNP PLASTIC POWER TRANSISTORSPower Darlingtons for Linear and Switching ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4

isc Silicon NPN Darlington Power Transistor BDX53DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 45V(Min)CEO(sus)High DC Current Gain: h = 750(Min) @I = 3AFE CLow Collector Saturation Voltage: V = 2.0 V (Max) @ I = 3.0 ACE(sat) CComplement to Type BDX54Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDes

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX53/A/B/C DESCRIPTION With TO-220C package High DC current gain DARLINGTON Complement to type BDX54/A/B/C APPLICATIONS Power linear and switching applications Hammer drivers,audio amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsol

Order this documentMOTOROLAby BDX53B/DSEMICONDUCTOR TECHNICAL DATANPNPlastic Medium-PowerBDX53BComplementary SiliconTransistorsBDX53CPNP. . . designed for generalpurpose amplifier and lowspeed switching applications.BDX54B High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 mAdcBDX54CVCEO(sus) = 80

BDX53BFPSILICON POWER DARLINGTON TRANSISTORAPPLICATIONS: GENERAL PURPOSE SWITCHING ANDAMPLIFIER LINEAR AND SWITCHING INDUSTRIALEQUIPMENT FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT)3DESCRIPTION 21The BDX53BFP is a silicon epitaxial-base NPNpower transistor in monolithic DarlingtonT0-220FPconfiguration and are mounted in T0-220FP fullymolded

BDX53FBDX54FCOMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL32EQUIPMENT 1DESCRIPTION TO-220The BDX53F is a silicon epitaxial-base NPNpower transistors in monolith

BDX53BFPSILICON POWER DARLINGTON TRANSISTORAPPLICATIONS: GENERAL PURPOSE SWITCHING ANDAMPLIFIER LINEAR AND SWITCHING INDUSTRIALEQUIPMENT FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTING3DESCRIPTION 21The BDX53BFP is a silicon Epitaxial-Base NPNpower transistor in monolithic DarlingtonT0-220FPconfiguration mounted in T0-220FP fully moldedisolated pa

BDX53BFIBDX54BFICOMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS COMPLEMENTARY PNP - NPN DEVICESAPPLICATIONS: GENERAL PURPOSE SWITCHING ANDAMPLIFIER LINEAR AND SWITCHING INDUSTRIALEQUIPMENTDESCRIPTION3The BDX53BFI is silicon epitaxial-base NPN 21power transistor in monolithic Darlingtonconfiguration and are mounted in ISOWATT220ISOWATT220plastic package. It is

BDX53B - BDX53CBDX54B - BDX54CComplementary power Darlington transistorsFeatures Good hFE linearity High fT frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diodeApplication321 Audio amplifiersTO-220 Linear and switching industrial equipmentDescriptionThe devices are manufactured in planar base island t

March 2011BDX53/A/B/CNPN Epitaxial Silicon TransistorApplications Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching ApplicationsFeatures Power Darlington TR Complement to BDX54, BDX54A, BDX54B and BDX54C respectivelyEquivalent CircuitCBTO-2201R1 R21.Base 2.Collector 3.EmitterR1 8.4kER2 0.3kAbsolute Maximum Ratin

BDX53/A/B/CHammer Drivers, Audio Amplifiers ApplicationsPower Liner and Switching Applications Power Darlington TR Complement to BDX54, BDX54A, BDX54B and BDX54C respectivelyTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BDX53 45 V

BDX53B, BDX53C (NPN),BDX54B, BDX54C (PNP)Plastic Medium-PowerComplementary SiliconTransistorshttp://onsemi.comThese devices are designed for general-purpose amplifier andlow-speed switching applications.DARLINGTONFeatures8 AMPERE High DC Current Gain -COMPLEMENTARY SILICONhFE = 2500 (Typ) @ IC = 4.0 AdcPOWER TRANSISTORS Collector Emitter Sustaining Voltage -

BDX53B, BDX53C (NPN),BDX54B, BDX54C (PNP)Plastic Medium-PowerComplementary SiliconTransistorswww.onsemi.comThese devices are designed for general-purpose amplifier andlow-speed switching applications.DARLINGTONFeatures8 AMPERE High DC Current Gain -COMPLEMENTARY SILICONhFE = 2500 (Typ) @ IC = 4.0 AdcPOWER TRANSISTORS Collector Emitter Sustaining Voltage - @ 1

BDX53B, BDX53C (NPN),BDX54B, BDX54C (PNP)Plastic Medium-PowerComplementary SiliconTransistorshttp://onsemi.comThese devices are designed for general-purpose amplifier andlow-speed switching applications.DARLINGTONFeatures8 AMPERE High DC Current Gain -COMPLEMENTARY SILICONhFE = 2500 (Typ) @ IC = 4.0 AdcPOWER TRANSISTORS Collector Emitter Sustaining Voltage -

BDX53B, BDX53C (NPN),BDX54B, BDX54C (PNP)Plastic Medium-PowerComplementary SiliconTransistorswww.onsemi.comThese devices are designed for general-purpose amplifier andlow-speed switching applications.DARLINGTONFeatures8 AMPERE High DC Current Gain -COMPLEMENTARY SILICONhFE = 2500 (Typ) @ IC = 4.0 AdcPOWER TRANSISTORS Collector Emitter Sustaining Voltage - @ 1

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDX53CDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(sus)High DC Current Gain: h = 750(Min) @I = 3AFE CLow Collector Saturation Voltage: V = 2.0 V (Max) @ I = 3.0 ACE(sat) CComplement to Type BDX54CMinimum Lot-to-Lot variations for robust deviceperformance and reliable ope

isc Silicon NPN Darlington Power Transistor BDX53FDESCRIPTIONCollector Current -I = 8ACHigh DC Current Gain-: h = 500(Min)@ I = 2AFE CComplement to Type BDX54FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power linear and switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

isc Silicon NPN Darlington Power Transistor BDX53BDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(sus)High DC Current Gain: h = 750(Min) @I = 3AFE CLow Collector Saturation Voltage: V = 2.0 V(Max) @ I = 3.0 ACE(sat) CComplement to Type BDX54BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDe

isc Silicon NPN Darlington Power Transistor BDX53ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(sus)High DC Current Gain: h = 750(Min) @I = 3AFE CLow Collector Saturation Voltage: V = 2.0 V(Max) @ I = 3.0 ACE(sat) CComplement to Type BDX54AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDe