BDX53CFI
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDX53CFI
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 60
W
Tensión colector-base (Vcb): 100
V
Tensión colector-emisor (Vce): 100
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 8
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20
MHz
Ganancia de corriente contínua (hfe): 750
Paquete / Cubierta:
TO220F
Búsqueda de reemplazo de transistor bipolar BDX53CFI
BDX53CFI
Datasheet (PDF)
8.1. Size:73K st
bdx53b bdx53c bdx54b bdx54c.pdf
BDX53B - BDX53CBDX54B - BDX54CComplementary power Darlington transistorsFeatures Good hFE linearity High fT frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diodeApplication321 Audio amplifiersTO-220 Linear and switching industrial equipmentDescriptionThe devices are manufactured in planar base island t
8.2. Size:149K fairchild semi
bdx53c.pdf
March 2011BDX53/A/B/CNPN Epitaxial Silicon TransistorApplications Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching ApplicationsFeatures Power Darlington TR Complement to BDX54, BDX54A, BDX54B and BDX54C respectivelyEquivalent CircuitCBTO-2201R1 R21.Base 2.Collector 3.EmitterR1 8.4kER2 0.3kAbsolute Maximum Ratin
8.3. Size:355K onsemi
bdx53b bdx53c bdx54b bdx54c.pdf
BDX53B, BDX53C (NPN),BDX54B, BDX54C (PNP)Plastic Medium-PowerComplementary SiliconTransistorswww.onsemi.comThese devices are designed for general-purpose amplifier andlow-speed switching applications.DARLINGTONFeatures8 AMPERE High DC Current Gain -COMPLEMENTARY SILICONhFE = 2500 (Typ) @ IC = 4.0 AdcPOWER TRANSISTORS Collector Emitter Sustaining Voltage - @ 1
8.4. Size:148K onsemi
bdx53cg.pdf
BDX53B, BDX53C (NPN),BDX54B, BDX54C (PNP)Plastic Medium-PowerComplementary SiliconTransistorshttp://onsemi.comThese devices are designed for general-purpose amplifier andlow-speed switching applications.DARLINGTONFeatures8 AMPERE High DC Current Gain -COMPLEMENTARY SILICONhFE = 2500 (Typ) @ IC = 4.0 AdcPOWER TRANSISTORS Collector Emitter Sustaining Voltage -
8.5. Size:355K onsemi
bdx53bg bdx53cg bdx54bg bdx54cg.pdf
BDX53B, BDX53C (NPN),BDX54B, BDX54C (PNP)Plastic Medium-PowerComplementary SiliconTransistorswww.onsemi.comThese devices are designed for general-purpose amplifier andlow-speed switching applications.DARLINGTONFeatures8 AMPERE High DC Current Gain -COMPLEMENTARY SILICONhFE = 2500 (Typ) @ IC = 4.0 AdcPOWER TRANSISTORS Collector Emitter Sustaining Voltage - @ 1
8.6. Size:212K inchange semiconductor
bdx53c.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDX53CDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(sus)High DC Current Gain: h = 750(Min) @I = 3AFE CLow Collector Saturation Voltage: V = 2.0 V (Max) @ I = 3.0 ACE(sat) CComplement to Type BDX54CMinimum Lot-to-Lot variations for robust deviceperformance and reliable ope
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