BDX53CFI Datasheet and Replacement
Type Designator: BDX53CFI
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO220F
BDX53CFI Transistor Equivalent Substitute - Cross-Reference Search
BDX53CFI Datasheet (PDF)
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BDX53B - BDX53C BDX54B - BDX54C Complementary power Darlington transistors Features Good hFE linearity High fT frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application 3 2 1 Audio amplifiers TO-220 Linear and switching industrial equipment Description The devices are manufactured in planar base island t... See More ⇒
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BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors www.onsemi.com These devices are designed for general-purpose amplifier and low-speed switching applications. DARLINGTON Features 8 AMPERE High DC Current Gain - COMPLEMENTARY SILICON hFE = 2500 (Typ) @ IC = 4.0 Adc POWER TRANSISTORS Collector Emitter Sustaining Voltage - @ 1... See More ⇒
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BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors http //onsemi.com These devices are designed for general-purpose amplifier and low-speed switching applications. DARLINGTON Features 8 AMPERE High DC Current Gain - COMPLEMENTARY SILICON hFE = 2500 (Typ) @ IC = 4.0 Adc POWER TRANSISTORS Collector Emitter Sustaining Voltage - ... See More ⇒
Datasheet: BDX50-7 , BDX51 , BDX53 , BDX53A , BDX53AFI , BDX53B , BDX53BFI , BDX53C , 431 , BDX53D , BDX53E , BDX53F , BDX53H , BDX53S , BDX54 , BDX54A , BDX54AFI .
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