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BDX87C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BDX87C
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 117 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 12 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 25 MHz
   Ganancia de corriente contínua (hfe): 750
   Paquete / Cubierta: TO3

 Búsqueda de reemplazo de transistor bipolar BDX87C

 

BDX87C Datasheet (PDF)

 ..1. Size:210K  inchange semiconductor
bdx87c.pdf

BDX87C
BDX87C

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDX87CDESCRIPTIONHigh DC Current Gain-: h = 750(Min)@ I = 6AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Complement to Type BDX88CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power linear and switching applic

 ..2. Size:213K  inchange semiconductor
bdx87 bdx87a bdx87b bdx87c.pdf

BDX87C
BDX87C

isc Silicon NPN Darlington Power Transistor BDX87/A/B/CDESCRIPTIONHigh DC Current Gain-: h = 750(Min)@ I = 6AFE CCollector-Emitter Sustaining Voltage-: V = 45V(Min)- BDX87; 60V(Min)- BDX87ACEO(SUS)80V(Min)- BDX87B; 100V(Min)- BDX87CComplement to Type BDX88/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesign

 9.1. Size:70K  st
bdx87 bdw88.pdf

BDX87C
BDX87C

BDX87CBDX88CCOMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPESDESCRIPTION The BDX87C is a silicon epitaxial-base NPNpower transistors in monolithic Darlingtonconfiguration and are mounted in Jedec TO-3metal case. They are intented for use in powerlinear and switching applications.1The complementary PNP types is the BDX88C.2TO-3INTERN

 9.2. Size:214K  inchange semiconductor
bdx87 a b c.pdf

BDX87C
BDX87C

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX87/A/B/C DESCRIPTION High DC Current Gain- : hFE= 750(Min)@ IC= 6A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDX87; 60V(Min)- BDX87A 80V(Min)- BDX87B; 100V(Min)- BDX87C Complement to Type BDX88/A/B/C APPLICATIONS Designed for use in power linear and s

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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