BDX87C - описание и поиск аналогов

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDX87C DESCRIPTION High DC Current Gain- h = 750(Min)@ I = 6A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Complement to Type BDX88C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power linear and switching applic

isc Silicon NPN Darlington Power Transistor BDX87/A/B/C DESCRIPTION High DC Current Gain- h = 750(Min)@ I = 6A FE C Collector-Emitter Sustaining Voltage- V = 45V(Min)- BDX87; 60V(Min)- BDX87A CEO(SUS) 80V(Min)- BDX87B; 100V(Min)- BDX87C Complement to Type BDX88/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Design

BDX87C BDX88C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDX87C is a silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. 1 The complementary PNP types is the BDX88C. 2 TO-3 INTERN

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX87/A/B/C DESCRIPTION High DC Current Gain- hFE= 750(Min)@ IC= 6A Collector-Emitter Sustaining Voltage- VCEO(SUS) = 45V(Min)- BDX87; 60V(Min)- BDX87A 80V(Min)- BDX87B; 100V(Min)- BDX87C Complement to Type BDX88/A/B/C APPLICATIONS Designed for use in power linear and s