All Transistors. BDX87C Datasheet

 

BDX87C Datasheet, Equivalent, Cross Reference Search


   Type Designator: BDX87C
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 117 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 25 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO3

 BDX87C Transistor Equivalent Substitute - Cross-Reference Search

   

BDX87C Datasheet (PDF)

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bdx87c.pdf

BDX87C
BDX87C

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDX87CDESCRIPTIONHigh DC Current Gain-: h = 750(Min)@ I = 6AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Complement to Type BDX88CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power linear and switching applic

 ..2. Size:213K  inchange semiconductor
bdx87 bdx87a bdx87b bdx87c.pdf

BDX87C
BDX87C

isc Silicon NPN Darlington Power Transistor BDX87/A/B/CDESCRIPTIONHigh DC Current Gain-: h = 750(Min)@ I = 6AFE CCollector-Emitter Sustaining Voltage-: V = 45V(Min)- BDX87; 60V(Min)- BDX87ACEO(SUS)80V(Min)- BDX87B; 100V(Min)- BDX87CComplement to Type BDX88/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesign

 9.1. Size:70K  st
bdx87 bdw88.pdf

BDX87C
BDX87C

BDX87CBDX88CCOMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPESDESCRIPTION The BDX87C is a silicon epitaxial-base NPNpower transistors in monolithic Darlingtonconfiguration and are mounted in Jedec TO-3metal case. They are intented for use in powerlinear and switching applications.1The complementary PNP types is the BDX88C.2TO-3INTERN

 9.2. Size:214K  inchange semiconductor
bdx87 a b c.pdf

BDX87C
BDX87C

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX87/A/B/C DESCRIPTION High DC Current Gain- : hFE= 750(Min)@ IC= 6A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDX87; 60V(Min)- BDX87A 80V(Min)- BDX87B; 100V(Min)- BDX87C Complement to Type BDX88/A/B/C APPLICATIONS Designed for use in power linear and s

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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