BDY25C Todos los transistores

 

BDY25C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BDY25C
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 87 W
   Tensión colector-base (Vcb): 200 V
   Tensión colector-emisor (Vce): 140 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 6 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 10 MHz
   Ganancia de corriente contínua (hfe): 75
   Paquete / Cubierta: TO3

 Búsqueda de reemplazo de transistor bipolar BDY25C

 

BDY25C Datasheet (PDF)

 9.1. Size:244K  comset
 bdy23-bdy24-bdy25-180t2-181t2-182t2.pdf pdf_icon

BDY25C

BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDY23, 180T2 60 Collector-Emitter Voltage VCEO BDY24, 181T2 90 V BDY25, 182T2 140 BDY23, 180T2 60 VCBO Collector-Base Voltage BDY24, 181T2 100 V BDY25, 182T2 200 BDY23, 180T2 VEBO Emitt

 9.2. Size:168K  comset
 bdy23 bdy24 bdy25 180t2 181t2 182t2.pdf pdf_icon

BDY25C

BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDY23, 180T2 60 VCEO Collector-Emitter Voltage BDY24, 181T2 90 V BDY25, 182T2 140 BDY23, 180T2 60 VCBO Collector-Base Voltage BDY24, 181T2 100 V BDY25, 182T2 200 BDY23, 180T2 VEBO Emit

 9.3. Size:207K  inchange semiconductor
 bdy25b.pdf pdf_icon

BDY25C

isc Silicon NPN Power Transistor BDY25B DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min.) (BR)CEO Collector-Emitter Saturation Voltage- V )= 0.6V(Max)@ I = 2A CE(sat C High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for LF signal powe amplifier applications. ABSOLUTE MAXIMUM RA

 9.4. Size:211K  inchange semiconductor
 bdy25.pdf pdf_icon

BDY25C

isc Silicon NPN Power Transistor BDY25 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min.) (BR)CEO Collector-Emitter Saturation Voltage- V )= 0.6V(Max)@ I = 2A CE(sat C High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for LF signal powe amplifier applications. ABSOLUTE MAXIMUM RAT

MOSTRAR MÁS

Otros transistores... BDY23C , BDY24 , BDY24A , BDY24B , BDY24C , BDY25 , BDY25A , BDY25B , BD335 , BDY26 , BDY26A , BDY26B , BDY26C , BDY27 , BDY27A , BDY27B , BDY27C .

History: CHUMH9GP | CHDTC115GKGP | NSP598 | 2SC4675 | CHFMA8GP | NSE171 | 2SC1869

 

 
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