BDY25C - параметры, поиск аналогов, даташиты транзистора

BDY25C Datasheet (PDF)

9.1. Size:244K comset
bdy23-bdy24-bdy25-180t2-181t2-182t2.pdf pdf_icon

BDY23, 180 T2BDY24, 181 T2BDY25, 182 T2NPN SILICON TRANSISTORS, DIFFUSED MESALF Large Signal Power AmplificationHigh Current Fast SwitchingABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitBDY23, 180T2 60Collector-Emitter VoltageVCEO BDY24, 181T2 90 VBDY25, 182T2 140BDY23, 180T2 60VCBO Collector-Base Voltage BDY24, 181T2 100 VBDY25, 182T2 200BDY23, 180T2VEBO Emitt

9.2. Size:168K comset
bdy23 bdy24 bdy25 180t2 181t2 182t2.pdf pdf_icon

BDY23, 180 T2BDY24, 181 T2BDY25, 182 T2NPN SILICON TRANSISTORS, DIFFUSED MESALF Large Signal Power AmplificationHigh Current Fast SwitchingABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitBDY23, 180T2 60VCEO Collector-Emitter Voltage BDY24, 181T2 90 VBDY25, 182T2140BDY23, 180T260VCBO Collector-Base Voltage BDY24, 181T2 100 VBDY25, 182T2 200BDY23, 180T2VEBO Emit

9.3. Size:207K inchange semiconductor
bdy25b.pdf pdf_icon

isc Silicon NPN Power Transistor BDY25BDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min.)(BR)CEOCollector-Emitter Saturation Voltage-: V )= 0.6V(Max)@ I = 2ACE(sat CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for LF signal powe amplifier applications.ABSOLUTE MAXIMUM RA

9.4. Size:211K inchange semiconductor
bdy25.pdf pdf_icon

isc Silicon NPN Power Transistor BDY25DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min.)(BR)CEOCollector-Emitter Saturation Voltage-: V )= 0.6V(Max)@ I = 2ACE(sat CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for LF signal powe amplifier applications.ABSOLUTE MAXIMUM RAT

Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .