BDY25C pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BDY25C Specs and Replacement

Type Designator: BDY25C

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 87 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Collector-Emitter Voltage |Vce|: 140 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 75

Noise Figure, dB: -

Package: TO3

BDY25C Substitution

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BDY25C datasheet

9.1. Size:244K comset

bdy23-bdy24-bdy25-180t2-181t2-182t2.pdf pdf_icon

BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDY23, 180T2 60 Collector-Emitter Voltage VCEO BDY24, 181T2 90 V BDY25, 182T2 140 BDY23, 180T2 60 VCBO Collector-Base Voltage BDY24, 181T2 100 V BDY25, 182T2 200 BDY23, 180T2 VEBO Emitt... See More ⇒

9.2. Size:168K comset

bdy23 bdy24 bdy25 180t2 181t2 182t2.pdf pdf_icon

BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDY23, 180T2 60 VCEO Collector-Emitter Voltage BDY24, 181T2 90 V BDY25, 182T2 140 BDY23, 180T2 60 VCBO Collector-Base Voltage BDY24, 181T2 100 V BDY25, 182T2 200 BDY23, 180T2 VEBO Emit... See More ⇒

9.3. Size:207K inchange semiconductor

bdy25b.pdf pdf_icon

isc Silicon NPN Power Transistor BDY25B DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min.) (BR)CEO Collector-Emitter Saturation Voltage- V )= 0.6V(Max)@ I = 2A CE(sat C High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for LF signal powe amplifier applications. ABSOLUTE MAXIMUM RA... See More ⇒

9.4. Size:211K inchange semiconductor

bdy25.pdf pdf_icon

isc Silicon NPN Power Transistor BDY25 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min.) (BR)CEO Collector-Emitter Saturation Voltage- V )= 0.6V(Max)@ I = 2A CE(sat C High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for LF signal powe amplifier applications. ABSOLUTE MAXIMUM RAT... See More ⇒

Detailed specifications: BDY23C , BDY24 , BDY24A , BDY24B , BDY24C , BDY25 , BDY25A , BDY25B , BD335 , BDY26 , BDY26A , BDY26B , BDY26C , BDY27 , BDY27A , BDY27B , BDY27C .